PNP S I L I C O N T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB1274 █ APPLICATIONS Low frequency power amplifier Applications. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220F T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation（Tc=25℃）……………………………20W 1―Base，B 2―Collector，C 3―Emitter，E PC——Collector Dissipation（Ta=25℃）……………………………2W V CBO ——Collector-Base Voltage………………………………-60V V CEO ——Collector-Emitter Voltage……………………………-60V V E B O ——Emitter-Base Voltage………………………………-6V IC——Collector Current（DC）………………………………………-3A IC——Collector Current（Pulse）……………………………………-8A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCBO BVCEO BVEBO Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Min Max Unit Test Conditions -60 V IC=-1mA, IE=0 -60 V IC=-5mA, -6 V IE=-1mA，IC=0 HFE（1） DC Current Gain 70 HFE（2） DC Current Gain 20 VCE(sat) Typ IB=0 VCE=-5V, IC=-0.5A 280 VCE=-5V, IC=-3A Collector- Emitter Saturation Voltage -0.4 -1.0 V IC=-2A, IB=-0.2A VBE Base-Emitter Voltage -0.8 -1.0 V VCE=-5V, IC=-0.5A ICBO Collector Cut-off Current -100 μA VCB=-40V, IE=0 IEBO Emitter Cut-off Current -100 μA VEB=-4V, IC=0 fT Cob Current Gain-Bandwidth Product 100 MHz VCE=-5V, IC=-0.5A Output Capacitance 60 pF VCB=-10V, f=1MHz █ hFE Classification Q 70—140 R 100—200 S 140—280 PNP S I L I C O N T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB1274