NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM28S █ APPLICATIONS General Purpose And Switching Applications. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissip ation…………………………………850mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage………………………………40V VCEO ——Collector-Emitter Voltage……………………………20V VE B O ——Emitter -Base Voltage………………………………6V IC——Collector Current………………………………………1.25A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ４０ Ｖ BVCEO Collector-Emitter Breakdown Voltage ２０ Ｖ BVEBO Emitter-Base Breakdown Voltage ６ Ｖ HFE(1) DC Current Gain ３００ IE=100μA，IC=0 VCE=1V, IC=1mA HFE(2) DC Current Gain ３００ １０００ VCE=1V, IC=100mA HFE(3) DC Current Gain ３１０ VCE=1V, IC=300mA HFE(4) DC Current Gain ３０３ VCE=1V, IC=500mA VCE(sat) Collector- Emitter Saturation Voltage ０．５５ Ｖ IC=600mA, IB=20mA VBE(sat) Base-Emitter Saturation Voltage １．２ Ｖ IC=600mA, IB=20mA ICBO Collector Cut-off Current １００ IEBO Emitter Cut-off Current １００ １００ ｎＡ VCB=35V, IE=0 ｎＡ VEB=6V, IC=0 ICES Collector Cut-off Current IC=100μA,IE=0 IC=1mA,IB=0 ｎＡ VCE=20V, VEB=0 █ hFE Classification B ３００—６００ C ５００—８００ D ７００—１０００