NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD179 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 30W 1―Emitter, E VCBO ——Collector-Base Voltage…………………………… 80V 2―Collector，C 3―Base，B VCEO ——Collector-Emitter Voltage………………………… 80V VEBO——Emitter-Base Voltage………………………………… 5V IC——Collector Current（Pulse）………………………………… 7A IC——Collector Current（DC）……………………………… 3A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics ICBO Collector Cut-off Current IEBO Emitter Cut-off Current Min Typ Max Unit Test Conditions 100 μA VCB=80V, IE=0 1 mA VEB=5V, IC=0 *HFE（1） DC Current Gain 40 *HFE（2） DC Current Gain 15 *VCE(sat) Collector- Emitter Saturation Voltage 0.8 V IC=1A, IB=0.1A *VBE(on) Base-Emitter On Voltage 1.3 V VCE=2V, IC=1A VCEO(sus) Collector-Emitter Sustaining Voltage 80 V IC=100mA, IB=0 Current Gain-Bandwidth Product 3 MHz ft VCE=2V, IC=150mA 250 VCE=2V, IC=1A *Pulse Test:PW=350μs,Duty Cycle=1.5% Pulsed █hFE(3) Classification Cassification hFE(3) 6 40~100 10 16 63~160 100~250 VCE=10V, IC=250mA,