HUASHAN HSBD440

PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD440
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(T c=25℃)…………………… 36W
1―Emitter, E
VCBO ——Collector-Base Voltage…………………………… -60V
2―Collector,C
3―Base,B
VCEO ——Collector-Emitter Voltage………………………… -60V
VCES ——Collector-Emitter Voltage………………………… -60V
VEBO ——Emitter-Base Voltage………………………………… -5V
IC——Collector Current(Pulse)………………………………… -7A
IC——Collector Current(DC)……………………………………- 4A
IB——Base Current………………………………………………-1A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Min Typ Max Unit Test Conditions ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
ICES
Collector Cut-off Current
*HFE(1) DC Current Gain 20 140 VCE=-5V, IC=-10mA *HFE(2) DC Current Gain 40 140 VCE=-1V, IC=-500mA *HFE(3) DC Current Gain 25 VCE=-1V, IC=-2A *VCE(sat) Collector- Emitter Saturation Voltage -0.8 V IC=-2A, IB=-0.2A *VBE(on1)
Base-Emitter On Voltage
-0.58 V VCE=-5V, IC=-10mA
*VBE(on2)
Base-Emitter On Voltage
-1.5 V VCE=-1V, IC=-2A
VCEO(sus)
Collector-Emitter Sustaining Voltage
-60 V IC=-100mA, IB=0
3 ft
Current Gain-Bandwidth Product
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
-100 μA VCB=-60V, IE=0
-1 mA VEB=-5V, IC=0
-100 μA VCE=-60V, VEB=0
MHz VCE=-1V, IC=-250mA,