Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR HBD682 █ APPLICATIONS Medium Power Linear switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126F Tstg ——Storage Temperature………………………… -65~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 40W VCBO——Collector-Base Voltage…………………………… -100V VCEO——Collector-Emitter Voltage………………………… -100V 1―Emitter, E 2―Collector，C 3―Base，B VEBO——Emitter-Base Voltage………………………………… -5V IC——Collector Current（Pulse）………………………………… -6A IC——Collector Current（DC）………………………………… -4A IB——Base Current…………………………………………-100mA █ 电参数（ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics ICBO Collector Cut-off Current IEBO Emitter Cut-off Current ICES *HFE Min Collector Cut-off Current DC Current Gain Typ Max Unit Test Conditions -200 μA VCB=-100V, IE=0 -2 mA VEB=-5V, IC=0 -500 μA VCE=-100V, VEB=0 VCE=-3V, IC=-1.5mA 750 *VCE(sat) Collector- Emitter Saturation Voltage -2.5 V IC=-1.5A, IB=-30mA VBE(on) Base-Emitter On Voltage -2.5 V VCE=-3V, IC=-1.5A VCEO(sus) Collector-Emitter Sustaining Voltage -100 * Pulse Test:PW=300µS,Duty Cycle=1.5% Pulsed IC=-50mA, IB=0 Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR HBD682