NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD441 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… －55~150℃ T j ——J unction Temperature……………………………… 150℃ PC——Collector Dissipation（T c=25℃）…………………… 36W 1―Emitter, E VCBO ——Collector-Base Voltage…………………………… 80V 2―Collector，C 3―Base，B VCEO —— Collector-Emitter Voltage………………………… 80V VCES ——Collector-Emitter Voltage ………………………… 80V VEBO ——Emitter-Base Voltage………………………………… 5V IC——Collector Current（Pulse）………………………………… 7A IC——Collector Current（DC）…………………………………… 4A IB——Base Current………………………………………………1A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current IEBO Emitter Cut-off Current ICES Collector Cut-off Current *HFE（1） DC Current Gain １５ １３０ VCE=5V, IC=10mA *HFE（2） DC Current Gain ４０ １４０ VCE=1V, IC=500mA *HFE（3） DC Current Gain １５ VCE=1V, IC=2A *VCE(sat) Collector- Emitter Saturation Voltage ０．８ Ｖ IC=2A, IB =0.2A *VBE(on1) Base-Emitter On Voltage ０．５８ Ｖ VCE=5V, IC=10mA *VBE(on2) Base-Emitter On Voltage １．５ Ｖ VCE=1V, IC=2A VCEO(sus) Collector-Emitter Sustaining Voltage ８０ Ｖ IC=100mA, IB=0 Current Gain-Bandwidth Product ３ ft * Ｐｕｌｓｅ Ｔｅｓｔ：ＰＷ＝３００μＳ，Ｄｕｔｙ Ｃｙｃｌｅ＝１．５％ Ｐｕｌｓｅｄ １００ μＡ VCB=80V, IE=0 １ ｍＡ VEB=5V, IC=0 １００ μＡ VCE=80V, VEB=0 ＭＨｚ VCE=1V, IC=250mA,