Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T R A N S I S T O R HSBD237 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 25W 1―Emitter, E VCBO ——Collector-Base Voltage…………………………… 100V 2―Collector，C 3―Base，B VCEO ——Collector-Emitter Voltage………………………… 80V VCER ——Collector-Emitter Voltage………………………… 100V VEBO——Emitter-Base Voltage………………………………… 5V IC——Collector Current（Pulse）………………………………… 6A IC——Collector Current（DC）……………………………… 2A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics ICBO Collector Cut-off Current IEBO Emitter-Base Cut-off Current hFE(1) DC Current Gain *hFE(2) Min Typ Max Unit Test Conditions 100 μA VCB=100V, IE=0 1 mA VEB=5V, IC=0 40 VCE=2V, IC=150mA 25 VCE=2V, IC=1A *VCE(sat) Collector-Emitter Saturation Voltage 0.6 V Ic=1A, IB=0.1A *VBE(ON) Base-Emitter On Voltage 1.3 V Ic=1A, VCE=2V VCEO(SUS) Collector-Emitter Sustaining Voltage 80 fT Current Gain-Bandwidth Product 3 * Pulse Test:PW=350μS,Duty Cycle≤1.5% Pulsed Ic=100mA,IB=0 MHz Ic=250mA, VCE=10V