HUASHAN HSBD436

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HSBD436
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 36W
1―Emitter, E
VCBO ——Collector-Base Voltage…………………………… -32V
2―Collector,C
3―Base,B
VCEO ——Collector-Emitter Voltage………………………… -32V
VCES ——Collector-Emitter Voltage………………………… -32V
VEBO——Emitter-Base Voltage………………………………… -5V
IC——Collector Current(Pulse)………………………………… -7A
IC——Collector Current(DC)………………………………… -4A
IB——Base Current………………………………………………-1A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
Min
Typ
Max
Unit
Test Conditions
-100
μA
VCB=-32V, IE=0
-1
mA
VEB=-5V, IC=0
*HFE(1)
DC Current Gain
40
140
VCE=-5V, IC=-10mA
*HFE(2)
DC Current Gain
85
140
VCE=-1V, IC=-500mA
*HFE(3)
DC Current Gain
50
*VCE(sat)
Collector- Emitter Saturation Voltage
*VBE(on)
Base-Emitter On Voltage
VCEO(sus)
Collector-Emitter Sustaining Voltage
ft
Current Gain-Bandwidth Product
* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed
VCE=-1V, IC=-2A
-0.5
V
IC=-2A, IB=-0.2A
-1.1
V
VCE=-1V, IC=-2A
-32
V
IC=-100mA, IB=0
3
MHz
-0.2
VCE=-1V, IC=-250mA,