PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HS733 █ APPLICATIONS The H733 is designed for driver stage of AF amplifier And low speed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………250mW VCBO ——Collector-Base Voltage………………………………-60V 1―Emitter，E 2―Base，B 3― Collector，C VCEO——Collector-Emitter Voltage……………………………-50V VE B O ——Emitter-Base Voltage………………………………-5V IC——Collector Current……………………………………-150mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage －６０ Ｖ BVCEO Collector-Emitter Breakdown Voltage －５０ Ｖ BVEBO Emitter-Base Breakdown Voltage －５ Ｖ DC Current Gain ７０ ７００ IE=-10μA，IC=0 VCE=-6V, IC=-1mA －０．３ Ｖ IC=-100mA, IB=-10mA －０．５ －０．８ Ｖ VCE=-6V, IC=-1mA －１００ ｎＡ VCB=-60V, IE=0 ｎＡ VEB=-5V, IC=0 HFE VCE(sat) Collector- Emitter Saturation Voltage VBE(ON) Base-Emitter On Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current fT Cob Current Gain-Bandwidth Product ５０ １８０ ２．８ NF Noise Figure ６．０ Output Capacitance IC=-100μA, IE=0 IC=-10mA, IB=0 －１００ ＭＨｚ VCE=-6V, IC=-10mA ｐＦ VCB=-6V, IE=0，f=1ＭＨｚ ＶＣＥ＝－６Ｖ，ＩＣ＝－０．３ｍＡ， ２０ ｄＢ ｆ＝１００Ｈｚ，Ｒｓ＝１０Ω █ hFE Classification O ７０—１４０ Y １２０—２４０ GR ２００—４００ BL ３５０—７００