DESCRIPTION PACKAGE The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES High Power Gain Excellent Ruggedness 50V Supply Voltage The device utilizes a RoHS compliant flanged package with a ceramic lid. The HV800 package style is qualified for gross leak test – MIL-STD-883, Method 1014. ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS Parameter Drain-Source Voltage Gate-Source Voltage IDSX PD2 TS Drain Current Power Dissipation Storage Temperature TJ Junction Temperature Value 95 -10 to +10 40 1500 -65 to +150 200 Unit V V A W °C °C THERMAL CHARACTERISTICS Symbol 1 JC Parameter Thermal Resistance Max 0.05 Unit °C/W RUGGEDNESS The HVV0912-450 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power over all phase angles and operating voltage across the frequency band of operation. Symbol LMT1 Parameter Load Mismatch Tolerance Test Condition POUT = 450W Max 20:1 Units VSWR F = 960 MHz ELECTRICAL CHARACTERISTICS Symbol VBR(DSS) IDSS IGSS GP1 IRL1 1 D 1 PD 1 2 Parameter Drain-Source Breakdown Drain Leakage Current Gate Leakage Current Power Gain Input Return Loss Drain Efficiency Pulse Droop Conditions VGS=0V,ID=10mA VGS=0V,VDS=50V VGS=5V,VDS=0V POUT=450W,F=960 POUT=450W,F=960 POUT=450W,F=960 POUT=450W,F=960 MHz MHz MHz MHz Typ 102 <500 <10 16.0 7.5 50 <0.25 Under Pulse Conditions: Pulse Width = 10 s, Pulse Period = 100 s at VDD = 50V, IDQ = 100mA Rated at TCASE = 25°C 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM Units V A A dB dB % dB RF Performance at 1090 MHz 700W 500W Output Power 200W 100W Idq = 0mA 50V pulsewidth 20us duty cycle 5% 50W Idq = 70mA 20W Idq = 250mA 10W 1W 2W 4W 8W 10W 20W Input Power 20 Idq = 250mA 19 18 Power Gain [dB] 17 16 Idq = 70mA 15 Idq = 0mA 14 13 12 11 10 50W 100W 200W Output Power 300W 400W 500W 600W 1090 MHz Gain [dB] at 1dB compression 50V, Idq = 200mA pulsewidth 20us duty cycle 5% M M M 16 M M 17 16 16 17 18 5 17 0 2.5 17 1 10 $ 25 16 16 18 18 ïM ïM 17 17 16 16 ïM ïM ïM Impedance presented to the input of the device & associated RF Gain performance 1 0 2.5 5 10 25 $ 1090 MHz 1215 MHz ïM ïM 960 MHz Desired impedance targets of the input matching circuit ïM ïM ïM out 65% 1.5Ropt 2Ropt 60% 1Ropt 3Ropt 55% 0.8Ropt Drain Efficiency 50% 45% 1090 MHz 50V, Idq = 70mA pulsewidth 20us duty cycle 5% 40% 35% 30% 25% 300W 250W 200W 350W 400W 500W 600W 750W Output Power 1 4 $ 10 45 P1dB [W] 40 200 2 40 0.4 0 0 0 30 30 400 500 ïM 200 50 0 40 50 40 200 45 45 40 ïM Loadline locations for 0.5, 1, 2, 3 x Ropt 200 Drain Eff [%] 0 20 ïM 30 40 45 500 0 400 200 300 ïM 1090 MHz 50V, Idq = 70mA pulsewidth 20us duty cycle 5% ïM Impedance presented to the output of the device & associated RF output power & Eff performance Impedance Target Selection 50V Refer to impedance targets below based on the selected loadline value of Ropt 0mA 70mA 200mA Pout 1Ropt 1Ropt 1Ropt 60% 55% 55% 1Ropt 1Ropt 1.5Ropt 1.5Ropt 55% 55% 60% 60% 1Ropt 1.7Ropt 1.7Ropt 55% 60% 60% 1.5Ropt 1.5Ropt 2Ropt 2Ropt 55% 55% 55% 60% 2Ropt 2Ropt 2.5Ropt 55% 60% 55% 2Ropt 1.7Ropt 55% 55% 5W 8W 600W 550W 500W 450W 400W 350W Pin 0 0.4 1 10W 12W 2 16W 4 $ 10 1090 MHz 960 MHz 3Ropt 2Ropt ïM ïM 1.5Ropt 1215 MHz 1Ropt 0.7Ropt ïM ïM ïM PACKAGE DIMENSIONS ASI PART NUMBER JDATE CODE inches mm DRAIN Note: Drawing is not actual size. GATE SOURCE ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, ASI does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability no liability for conse-quences resulting from the use of such information. No license, either expressed or implied, is conveyed under any ASI intellectual property rights, including any patent rights.