AH114 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Features Product Description • 60 – 2500 MHz • +24 dBm P1dB • +41 dBm Output IP3 • 19 dB Gain @ 900 MHz • 14.5 dB Gain @ 1900 MHz • Single Positive Supply (+5V) • SOT-89 SMT Package Applications • • • • Final stage amplifiers for Repeaters Mobile Infrastructure CATV / DBS Defense / Homeland Security Functional Diagram The AH114 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +41 dBm OIP3 and +24 dBm of compressed 1dB power. It is housed in an industry standard SOT-89 SMT package. All devices are 100% RF and DC tested. 4 1 The AH114 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH114 to maintain high linearity over temperature and operate directly off a single +5 V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Specifications Parameters Product Information 2 3 Function Input / Base Output / Collector Ground Pin No. 1 3 2, 4 Typical Performance Units Min Typ Max Parameters Units Typical MHz dB dB dB dBm dBm 60 13.5 1900 14.5 -10 -14 +23 +41 2500 Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 Noise Figure Supply Bias MHz dB dB dB dBm dBm dB 900 1900 2140 19 14.5 14 -14 -10 -25 -10 -14 -20 +24 +23 +23 +40 +41 +40 5.0 5.0 6.0 +5 V @ 150 mA Frequency Range S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 IS-95A Channel Power @ -45 dBc ACPR Noise Figure Operating Current Range Device Voltage dBm dB mA V +17 135 5.0 150 +5 165 Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +5 V, I = 150 mA, +25° C Test conditions unless otherwise noted. 1. T = 25ºC, Vsupply = +5 V, Frequency = 1900 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameters Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Rating -40 to +85 °C -65 to +150 °C +12 dBm +6 V 220 mA Ordering Information Part No. Description AH114-89 AH114-89PCB900 AH114-89PCB1900 AH114-89PCB2140 ¼ Watt, High Linearity InGaP HBT Amplifier 900 MHz Evaluation Board 1900 MHz Evaluation Board 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com December 2003 AH114 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information Typical Device Data S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25°C, unmatched 50 ohm system) 0.8 2. 0 6 0. 2. 0 0. 4 20 Sw p Max 3.075GH z 0 3. 0 4. 5.0 0 3. 0 4. 5.0 0.2 25 0.2 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10 10.0 0.2 10.0 15 -10.0 -4. 0 -5. 0 -3 .0 Sw p Min 0.05GH z .0 -2 -0.8 3 Sw p Min 0.05GH z -1.0 2.5 -0. 6 2 .4 -0 .0 -2 1.5 Frequency (GHz) -1.0 1 -0.8 0.5 -0. 6 0 -3 .0 .4 -0 0 2 -0. -4. 0 -5. 0 2 -0. 5 -10.0 Gain (dB) 1.0 0.8 6 0. DB(GMax) * 0. 4 DB(|S[2,1]|) * S22 Sw p Max 3.075GH z 1.0 S11 Gain / Maximum Stable Gain 30 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments. S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25°C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -3.61 -3.31 -2.62 -2.62 -2.54 -2.39 -2.27 -2.21 -2.16 -2.05 -1.99 -1.84 -1.68 -1.46 -1.33 -1.20 -1.17 -169.14 -173.35 179.12 173.23 168.30 163.31 158.06 152.89 147.55 142.54 137.85 133.47 129.41 125.20 120.48 115.03 109.05 23.08 21.93 19.02 17.74 16.69 15.62 14.57 13.55 12.54 11.65 10.70 9.91 9.13 8.46 7.85 7.22 6.62 149.67 148.90 146.43 136.11 123.77 111.53 101.13 91.40 82.69 74.35 66.99 59.96 53.84 47.68 41.30 34.74 27.78 -30.46 -29.57 -27.97 -27.96 -27.96 -27.96 -26.02 -26.02 -26.02 -26.02 -25.08 -24.44 -24.44 -24.44 -23.27 -23.10 -23.10 17.14 14.05 9.40 10.86 10.86 10.62 9.88 8.87 7.57 5.95 4.22 2.37 0.24 -2.39 -5.53 -9.13 -12.86 -7.74 -7.80 -6.40 -6.33 -6.09 -5.86 -5.68 -5.58 -5.37 -5.20 -5.20 -5.05 -5.01 -4.89 -4.88 -4.73 -4.66 -128.38 -143.29 -169.43 -179.95 173.78 168.37 163.12 157.73 152.46 147.09 141.71 136.43 131.29 126.16 121.19 116.28 111.40 Application Circuit PC Board Layout Circuit Board Material: .014” Getek, 4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper Microstrip line details: width = .026”, spacing = .026” Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com December 2003 AH114 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information 900 MHz Application Circuit (AH114-89PCB900) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 900 MHz 19 dB -14 dB -10 dB All passiv e components are of size 0603 unless otherwise noted. RES ID=L2 R=2700 Ohm +40 dBm (+11 dBm / tone, 1 MHz spacing) Output P1dB Noise Figure Supply Voltage Supply Current CAP ID=C3 C=1e5 pF size 1206 Vcc = +5 V P ORT P=1 Z=50 Ohm +24 dBm 5.0 dB +5 V 150 mA CAP ID=C4 C=56 pF CAP ID=C2 C=1000 pF size 0805 DIODE1 ID= D1 5.6 V IND I D= L1 L=3 3 nH RES I D=L3 R=0 Ohm SUBCKT ID=U1 NET="AH114" CAP ID=C12 C=5.6 pF Measured parameters were taken at 25 °C. CAP ID=C1 C=56 pF CAP ID=C5 C=56 pF PORT P=2 Z=50 Ohm CAP ID=C13 C=1 pF C12 should be placed at the silk screen marker "F" on the W J evaluation board. C13 should be placed at the silk screen marker "8" on the W J evaluation board. The capacitor s hould be placed 14° @ 0.9GHz from pin 1 of the AH114. The capacitor s hould be placed 19° @ 0.9GHz from pin 3 of the AH114. ACPR IS-95A vs. Channel Power Application Circuit: 900 MHz IS-95, 9 Ch. Forward, 30 kHz Meas BW, ±885 kHz offset 20 -40 15 freq = 0.9 GHz 5 DB(|S[1,1]|) * DB(|S[2,1]|) * ACPR (dBc) Magnitude (dB) 10 DB(|S[2,2]|) * 0 -5 -50 -60 -10 -15 -70 -20 0.7 0.8 0.9 Frequency (GHz) 1 13 1.1 14 15 16 17 18 Output Channel Power (dBm) 1900 MHz Application Circuit (AH114-89PCB1900) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) Output P1dB Noise Figure Supply Voltage Supply Current CAP ID=C3 C=1e5 pF size 1206 Vcc = +5 V 1900 MHz 14.5 dB -10 dB -14 dB All passive com ponents are of size 0603 unless otherwise noted. DIODE1 ID=D1 5.6 V RES ID=L2 R=2700 Ohm +41 dBm PORT P=1 Z=50 Ohm +23 dBm 5.0 dB +5 V 150 mA SUBCKT ID=U1 NET="AH114" CAP ID=C7 C=2.4 pF Measured parameters were taken at 25 °C. CAP ID=C1 C=56 pF IND ID=L1 L=18 nH IND ID=L3 L=2.7 nH CAP ID=C4 C=56 pF CAP ID=C2 C=1000 pF size 0805 CAP ID=C5 C=56 pF PORT P=2 Z=50 Ohm CAP ID=C13 C=1.2 pF C7 should be placed at the silk s creen marker "A" on the W J evaluation board. C13 should be placed at the silk screen m arker "7" on the W J evaluation board. The capacitor should be placed 5° @ 1.9GHz from pin 1 of the AH114. The capacitor should be placed 34° @ 1.9GHz from pin 3 of the AH114. ACPR IS-95A vs. Channel Power Application Circuit: 1900 MHz IS-95, 9 Ch. Forward, 30 kHz Meas BW, ±885 kHz offset 20 -40 15 freq = 1.9 GHz 5 DB(|S[1,1]|) * DB(|S[2,1]|) * ACPR (dBc) Magnitude (dB) 10 DB(|S[2,2]|) * 0 -5 -50 -60 -10 -15 -70 -20 1.6 1.7 1.8 1.9 Frequency (GHz) 2 2.1 13 14 15 16 17 18 Output Channel Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com December 2003 AH114 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information 2140 MHz Application Circuit (AH114-89PCB2140) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) Output P1dB Noise Figure Supply Voltage Supply Current CAP ID=C3 C=100000 pF size 1206 Vcc = +5 V 2140 MHz 14 dB -25 dB -20 dB All passive components are of size 0603 unless otherwise noted. CAP ID=C2 C=1000 pF size 0805 DIODE1 ID=D1 5.6 V RES ID=L2 R=2700 Ohm +23 dBm PORT P=1 Z =50 Ohm C6 should be placed 19. 5° @ 2.14GHz from pin 1 of the AH114. CAP CAP ID=C4 ID=C6 C=56 pF C=1.5 pF +40 dBm 6.0 dB +5 V 150 mA Measured parameters were taken at 25 °C. CAP ID=C1 C=56 pF IND ID=L1 L=18 nH CAP ID=C5 C=56 pF PORT P=2 Z=50 Ohm SUBCKT CAP ID=U1 ID=C12 NET="AH114" C=1.5 pF C12 sho uld be placed at the silk sc reen marker "F" on the WJ evaluation board. C13 should be placed at the silk screen marker "6" on the WJ evaluation board. The capacitor sho uld b e placed 33° @ 2.14GHz from pin 1 of the AH114. The capacitor should be placed 39° @ 2.14GHz from pin 3 of the AH114. CAP ID=C13 C=0.8 pF W-CDMA ACLR vs. Channel Power Application Circuit: 2140 MHz 3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset -35 15 freq = 2140 MHz 10 -40 DB(|S[1,1]|) * 0 DB(|S[2,1]|) * ACLR (dBc) Magnitude (dB) 5 DB(|S[2,2]|) * -5 -10 -45 -50 -55 -15 -20 -60 -25 1.9 2 2.1 Frequency (GHz) 2.2 12 2.3 13 14 15 16 Output Channel Power (dBm) 70 MHz Reference Design Vcc = +5 V Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) Output P1dB Noise Figure Supply Voltage Supply Current CAP ID=C3 C=10000000 pF 70 MHz 23.4 dB -15 dB -14 dB CAP ID=C2 C=1000 pF RES ID=R2 R=0 Ohm CAP ID=C1 C=10 pF RES ID=L2 R=2700 Ohm +44.5 dBm +23.8 dBm 6.5 dB +5 V 150 mA IND ID=L3 L=56 nH CAP ID=C4 C=1000 pF PORT P=1 Z=50 Ohm IN D ID=L1 L=470 nH IN D ID=L5 L=33 nH RES ID=R4 R=3.9 Ohm PORT P=2 Z=50 Ohm CAP ID=C9 C=68 pF CAP ID=C5 C=1000 pF SUBCKT ID=U1 NET="AH114" Measured parameters were taken at 25 °C. Measured Return Loss Measured Gain 0 26 DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|) Return Loss (dB) -5 Gain (dB) 24 22 -10 -15 -20 -25 20 40 50 60 70 Frequency (MHz) 80 90 100 40 50 60 70 Frequency (MHz) 80 90 100 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com December 2003 AH114 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information 110 MHz Reference Design Vcc = +5 V Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) Output P1dB Noise Figure Supply Voltage Supply Current CAP ID= C3 C=1e7 pF 110 MHz 21.9 dB -16 dB -12 dB +44 dBm +23.8 dBm 6.6 dB +5 V 150 mA CAP ID= C2 C=1000 pF RES ID=R2 R=0 Ohm CAP ID=C1 C=10 pF RES ID= L2 R=2700 Ohm PORT P=1 Z=50 Ohm IND ID=L3 L=33 nH CAP ID=C4 C=100 0 pF IND ID=L5 L=18 nH RES ID=R4 R=3.9 Ohm IND ID=L1 L=470 nH PORT P=2 Z= 50 Ohm CAP ID=C9 C=47 pF CAP ID= C5 C=1000 pF SUBCKT ID=U1 NET="AH114" Measured parameters were taken at 25 °C. Measured Gain Measured Return Loss 24 0 DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|) Return Loss (dB) -5 Gain (dB) 22 20 -10 -15 -20 18 -25 80 90 100 110 120 Frequency (MHz) 130 140 80 90 100 110 120 Frequency (MHz) 130 140 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com December 2003 AH114 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information Outline Drawing Product Marking The component will be marked with an “AH114” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specification for this part is located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Class 1A Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 Land Pattern MSL Rating: Level 3 at +235° C convection reflow Standard: JEDEC Standard J-STD-020A Mounting Config. Notes Parameter Rating Operating Case Temperature Thermal Resistance1 Junction Temperature2 -40 to +85° C 149° C / W 197° C Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85° C. 2. This corresponds to the typical biasing condition of +5V, 150 mA at an 85° C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247° C. MTTF vs. GND Tab Temperature 1000.0 MTTF (million hrs) Thermal Specifications 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. 100.0 10.0 1.0 60 70 80 90 100 110 Tab Temperature (°C) 120 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com December 2003