SANYO TF250TH

TF250TH
Ordering number : ENA0381
SANYO Semiconductors
DATA SHEET
TF250TH
N-channel Silicon Junction FET
Electret Condenser Microphone
Applications
Features
•
•
•
•
•
Ultrasmall package facilitates miniaturization in end products.
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Symbol
Conditions
Ratings
VGDO
IG
Gate Current
Drain Current
Unit
--20
V
10
mA
Junction Temperature
ID
PD
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Allowable Power Dissipation
1
mA
100
mW
Electrical Characteristics at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Symbol
V(BR)GDO
VGS(off)
IDSS
yfs
Conditions
IG=--100µA
VDS=2V, ID=1µA
VDS=2V, VGS=0V
Input Capacitance
Ciss
VDS=2V, VGS=0V, f=1kHz
VDS=2V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=2V, VGS=0V, f=1MHz
Marking: C
Ratings
min
typ
max
--20
--0.1
V
--0.4
140*
0.7
Unit
--1.0
350*
1.3
V
µA
mS
2.8
pF
0.55
pF
Continued on next page.
* : The TF250TH is classified by IDSS as follows : (unit : µA)
Rank
IDSS
4
140 to 240
5
210 to 350
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82506GB MS IM TC-00000099 No. A0381-1/4
TF250TH
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[Ta=25°C, VCC=2V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]
Voltage Gain
GV
∆GVV
∆Gvf
Reduced Voltage Characteristic
Frequency Characteristic
VIN=10mV, f=1kHz
0.8
VIN=10mV, f=1kHz, VCC=2→1.5V
dB
--0.7
f=1kHz to 110Hz
Total Harmonic Distortion
THD
VIN=30mV, f=1kHz
Output Noise Voltage
VNO
VIN=0V, A curve
Package Dimensions
--2.0
dB
--1.0
dB
--100
dB
0.6
%
Test Circuit
unit : mm (typ)
7031-001
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
Top View
0.2
1.4
0.25
2.2kΩ
VCC=2V
VCC=1.5V
0.8
1.2
3
5pF
2
1
0.2
0.2
33µF
+
0.1
0.45
0.34
VTVM V THD
OSC
0.07
0.07
Bottom View
1 : Drain
2 : Source
3 : Gate
SANYO : VTFP
ID -- VDS
300
ID -- VDS
300
0V
V GS=
V GS=0V
250
Drain Current, ID -- µA
Drain Current, ID -- µA
250
200
150
--0.1V
100
--0.2V
50
--0.3V
200
--0.1V
150
100
--0.2V
50
--0.4V
--0.3V
--0.4V
0
0
0
0.5
1.0
1.5
Drain-to-Source Voltage, VDS -- V
2.0
IT10917
0
4
5
Drain-to-Source Voltage, VDS -- V
1
2
3
IT10918
No. A0381-2/4
TF250TH
300
300
50
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
Gate-to-Source Voltage, VGS -- V
°C
--0.6
--0.5
--0.3
--0.2
--0.1
0
IT10920
VGS(off) -- IDSS
--0.7
VDS=2V
ID=1µA
VDS=2V
VGS=0V
f=1kHz
1.8
--0.4
Gate-to-Source Voltage, VGS -- V
Cutoff Voltage, VGS(off) -- V
Forward Transfer Admittance, yfs -- mS
0
--0.7
0
IT10919
yfs -- IDSS
2.0
1.6
1.4
1.2
1.0
0.8
0.6
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
100
200
300
Drain Current, IDSS -- µA
400
500
IT10921
0
Ciss -- VDS
10
100
Reverse Transfer Capacitance, Crss -- pF
7
5
3
2
200
300
Drain Current, IDSS -- µA
400
500
IT10922
Crss -- VDS
1.0
VGS=0V
f=1MHz
Input Capacitance, Ciss -- pF
100
50
0
--0.7
VGS=0V
f=1MHz
7
5
3
2
0.1
1.0
5
7
2
1.0
3
5
7
2
10
Drain-to-Source Voltage, VDS -- V
5
3
Reduced Voltage Characteristic, ∆GVV -- dB
GV : VCC=2V
VIN=10mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
1.2
1.0
0.8
0.6
0.4
0.2
0
--0.2
--0.4
--0.6
0
100
200
300
Drain Current, IDSS -- µA
400
500
IT10925
7
1.0
2
3
5
7
2
10
Drain-to-Source Voltage, VDS -- V
IT10923
GV -- IDSS
1.4
Voltage Gain, GV -- dB
150
--2
5°C
25
0µ
A
15
0µ
A
100
200
°C
µA
50
S =3
150
250
75
250
VDS=2V
Ta
=
Drain Current, ID -- µA
350
ID
S
Drain Current, ID -- µA
VDS=2V
350
200
ID -- VGS
400
25
ID -- VGS
400
∆GVV -- IDSS
0
3
IT10924
∆GVV : VCC=2V→1.5V
VIN=10mV
f=1kHz
IDSS : VDS=2V
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0
100
200
300
Drain Current, IDSS -- µA
400
500
IT10926
No. A0381-3/4
TF250TH
THD -- VIN
THD : VCC=2V
f=1kHz
IDSS : VDS=2V
10
150µA
I DSS=
250µA
350µA
1.0
0.1
THD : VCC=2V
VIN=30mV
f=1kHz
IDSS : VDS=2V
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
Input Voltage, VIN -- mV
200
IT10927
PD -- Ta
120
Allowable Power Dissipation, PD -- mW
THD -- IDSS
1.4
Total Harmonic Distortion, THD -- %
Total Harmonic Distortion, THD -- %
100
0
100
200
300
Drain Current, IDSS -- µA
400
500
IT10928
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10929
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
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or contained herein are controlled under any of applicable local export control laws and regulations, such
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Any and all information described or contained herein are subject to change without notice due to
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for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of August, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0381-4/4