UGF27025 25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 2.5 to 2.7 GHz. Rated with a minimum output power of 25W, it is ideal for CW and Multi-Tone Amplifiers in Class AB operation. • • • • • • • ALL GOLD metal system for highest reliability • Common source. • Industry standard package Internally matched for repeatable manufacturing High gain, high efficiency and high linearity Integrated ESD Protection. Maximum gain and insertion phase flatness. Output load VSWR tolerance 10:1 all phase angles at 28VDC, 2500MHz, 25W (CW) output power. Package Type 440159 PN: UGF27025F Application Specific Performance, 2.7 GHz • Typical 2-Tone Performance Average Load Power – 12.5 W ηD – 30% Power Gain – 11.5 dB IMD3: -30dBc @ -100kHz/ +100KHz VDD – 28V IDQ – 330mA • Typical CW Performance Average Load Power – 25 W ηD – 38% Power Gain – 11.0 dB VDD – 28V IDQ – 330mA Page 1 of 7 Specifications subject to change without notice http://www.cree.com/ UGF27025 Rev. 1 UGF27025 Maximum Ratings Rating Drain to Source Voltage, Gate connected to Source Gate to Source Voltage o Total Device Dissipation @ Tcase = 70 C o Derate above 70 C Storage Temperature Range Maximum Operating Junction Temperature Symbol VDSS VGSS Tstg TJ Value 65 +15 to -0.5 83.5 0.48 -65 to +150 200 Symbol Typical ΘJC 2.1 PD Unit Volts Volts Watts o W/ C o C o C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Unit o C/W Electrical DC Characteristics (Tc=25°C unless otherwise specified) Rating Drain to Source Breakdown Voltage (VGS=0, ID=1mA) Drain to Source Leakage current (VDS=28V, VGS=0) Gate to Source Leakage current (VGS=15V, VDS=0) Threshold Voltage (VDS=10V, ID=1mA) Gate Quiescent Voltage (VDS=28 V, ID=330mA) Drain to Source On Voltage (VGS=10V, ID=1A) Forward Transconductance (VDS=10V, ID=1A) Page 2 of 7 Symbol Min Typ Max Unit BVDSS 65 - - Volts IDSS - - 1.0 mA IGSS - - 1.0 µA VGS(th) - 3.5 - Volts VGS(Q) 3.0 4.0 5.0 Volts VDS(on) - - 0.33 Volts Gm 1.0 - - S Specifications subject to change without notice http://www.cree.com/ UGF27025 Rev. 1 UGF27025 AC Characteristics (Tc=25°C unless otherwise specified) Rating Input capacitance * (including matching capacitor) (VDS=28V, VGS=0V, f = 1MHz) Output capacitance * (including matching capacitor) (VDS= 28V, VGS=0V, f = 1MHz) Feedback capacitance * (VDS=28V, VGS=0V, f = 1MHz) * Part is internally matched on input and output. Symbol Min Typ Max Unit CISS - 74 - pF COSS - 352 - pF CRSS - 1.6 - pF RF and Functional Tests (In Cree Microwave Broadband Fixture, Tc=25° C unless otherwise specified) Rating CW Low Power Gain, Pout=8W VDD=28V, IDQ=330mA, f=2700 MHz CW Power Gain, Pout = 25 W VDD=28V, IDQ=330mA, f=2700 MHz CW Drain Efficiency, Pout = 25 W, f=2700 MHz, VDD=28V, IDQ=330mA Two-Tone Common-Source Amplifier Power Gain VDD=28V, IDQ=330mA, Pout = 25 W PEP f1 =2700 MHz and f2=2700.1 MHz Two-Tone Intermodulation Distortion VDD=28V, IDQ=330mA, Pout = 25 W PEP f1 =2700 MHz and f2=2700.1 MHz Two-Tone Drain Efficiency VDD=28V, IDQ=330mA, Pout = 25 W PEP f1 =2700 MHz and f2=2700.1 MHz Input Return Loss VDD =28V, Pout = 25 W PEP, IDQ=330mA f1 =2500 MHz and 2700 MHz, Tone Spacing = 100kHz Load Mismatch Tolerance VDS=28V, IDQ= 330 mA, Pout=25W, f=2500 MHz Symbol Min Typ Max Unit GL 11 12 - dB GP 10 11 - dB ηD 34 38 - % GTT 10.5 11.5 - dB IMD - -30 -28 dBc ηD2Τ 26 30 - % IRL - - -9 dB VSWR 10:1 - - Ψ CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate precautions in handling, packaging and testing MOS devices must be observed. Page 3 of 7 Specifications subject to change without notice http://www.cree.com/ UGF27025 Rev. 1 UGF27025 13 CW Power Gain and Efficiency Vs Power Output 45 40 Test Conditions: Freq=2700MHz, VDD=28V, IDQ=330mA, Temp=25 C 35 30 11 Eff(%) Gp(dB) 12 25 Gp(dB) EFF(%) 20 10 15 6.4 8.0 10.1 12.7 15.9 20.2 25.3 31.9 Pout (W) -20 Intermodulation Distortion & Efficiency Vs Power Output 40 3rd UpIMD(dBc) IMD (dBc) -40 5th UpIMD(dBc) 7th UpIMD(dBc) 30 9th UpIMD(dBc) EFF(%, Avg) -50 20 -60 -70 -80 Test Conditions: Freq1=2700MHz, Freq2=2700.1MHz, Vdd=28V, Idq=330mA, Temp=25 C -90 10 Drain Efficiency (%) -30 0 1.0 1.3 1.6 2.0 2.5 3.2 4.0 5.1 6.4 8.0 10.1 12.6 16.0 Pout, 2-Tone (W,Avg) Page 4 of 7 Specifications subject to change without notice http://www.cree.com/ UGF27025 Rev. 1 UGF27025 Test Fixture Test Fixture Layout for 2.5-2.7GHz Test Fixture Schematic Page 5 of 7 Specifications subject to change without notice http://www.cree.com/ UGF27025 Rev. 1 UGF27025 Product Dimensions Page 6 of 7 UGF27025F -Package Number 440159 Specifications subject to change without notice http://www.cree.com/ UGF27025 Rev. 1 UGF27025 Disclaimer: Specifications are subject to change without notice. Cree Microwave, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree Microwave for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree Microwave. Cree Microwave makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree Microwave in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree Microwave products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Cree Microwave is a trademark and Cree and the Cree logo are registered trademarks of Cree, Inc. Contact Information: Cree Microwave, Inc. 160 Gibraltar Court Sunnyvale, CA 94089-1319 Sheryle Henson (Cree Microwave—Marketing Manager) 408-962-7783 Tom Dekker (Cree Microwave—Sales Director) 919-313-5639 Page 7 of 7 Specifications subject to change without notice http://www.cree.com/ UGF27025 Rev. 1