Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 – 1990 MHz. • Typical GSM Performance: Power Gain – 14 dB (Typ) @ 30 Watts Efficiency – 50% (Typ) @ 30 Watts • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power • Excellent Thermal Stability • Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. GSM/GSM EDGE 1.93 – 1.99 GHz, 30 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465E–03, STYLE 1 NI–400 MRF18030BR3 CASE 465F–03, STYLE 1 NI–400S MRF18030BSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS +15, –0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 83.3 0.48 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 2.1 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF18030BR3 MRF18030BSR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) 2 3.9 4.5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs — 2 — S Crss — 1.3 — pF Output Power, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz) P1dB 27 30 — Watts Common–Source Amplifier Power Gain @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz) Gps 13 14 — dB Drain Efficiency @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz) η 46.5 50 — % Input Return Loss @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 – 1990 MHz) IRL — –12 –9 dB Output Mismatch Stress @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f1 = 1930 – 1990 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) Device specifications obtained on a Production Test Fixture. MRF18030BR3 MRF18030BSR3 2 MOTOROLA RF DEVICE DATA C1 C2 C3 C4, C5 C6, C7, C8 C9 R1 R2, R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 1.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 1.2 pF, 100B Chip Capacitors 8.2 pF, 100B Chip Capacitors 220 mF, 63 V Electrolytic Capacitor 1.0 kΩ, 1/8 W Chip Resistor (0805) 10 kΩ, 1/8 W Chip Resistors (0805) 0.496″ x 0.087″ Microstrip 1.022″ x 0.087″ Microstrip 0.257″ x 0.633″ Microstrip 0.189″ x 0.394″ Microstrip 0.335″ x 0.394″ Microstrip 0.616″ x 0.087″ Microstrip 0.845″ x 0.087″ Microstrip 0.366″ x 0.087″ Microstrip ≈0.500″ x 0.087″ Microstrip Figure 1. 1930 – 1990 MHz Test Fixture Schematic ! CUTOUT AREA "#$%&' MRF18030B "&(()*' Figure 2. 1930 – 1990 MHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF18030BR3 MRF18030BSR3 3 . (& 1 . 2 / . / 1 . 2 . . /. 1 2 3 4 5 3 . 6 3 _ / .. . . 2 . 3 4 5 3 . 6 3 _ .; 2 . .; 2 /. .. ... $ 3 2 . . .. . Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power 5 3 .. 6 .. 6 (& -++2,++"' (& -++2,++"' ... .. .. 6 .. 6 3 4 7 3 . 89: 3 _ .; 3 4 5 3 . 6 7 3 . 89: . .; .. .. . <- 2, "2' <- 2, "2' Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power (& -++2,++"' . 5 3 . 6 7 3 . 89: 3 _ _ _ . 3 _ (& -++2,++"' . . . Figure 4. Output Power versus Frequency . . 7- ,5,! "89:' 7- ,5,! "89:' 3 <- 2, "2' Figure 7. Power Gain versus Output Power MRF18030BR3 MRF18030BSR3 4 . . (& . . h . .. . . .; 3 4 5 3 . 6 7 3 . 89: 3 _ . η-++,,!+"=' (& -++2,++"' / - +,+ +"' (& 1 2 . < -++2,+"2' . . .. <- 2, "2' Figure 8. Power Gain and Efficiency versus Output Power MOTOROLA RF DEVICE DATA $ 3 Ω 7 3 . 89: 7 3 . 89: D 7 3 . 89: 7 3 . 89: 3 - 5 3 . 6- < 3 . 2 "2' f MHz Zin ZOL* Ω Zin Ω 1710 2.92 + j8.24 4.18 + j9.06 1785 3.84 + j9.75 4.59 + j9.46 1805 4.15 + j10.38 4.98 + j9.06 1840 4.04 + j10.22 6.10 + j7.63 1880 6.12 + j12.29 5.83 + j6.89 1960 6.20 + j12.29 5.55 + j6.33 1990 8.61 + j12.10 5.93 + j6.66 2110 15.19 + j11.85 3.82 + j5.33 = Complex conjugate of the source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given power, voltage, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, and drain efficiency. (< 8%<4>$? @<AB <(< 8%<4>$? @<AB @C$4@ @ @&< Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF18030BR3 MRF18030BSR3 5 NOTES MRF18030BR3 MRF18030BSR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS 2X ### G Q 8 8 8 B ,E ; 8,E 9; ; ,, 8, ,, , 8, ! ;8- ; ; 8, 9 8,, .;.. ".;' 2! 8 F, !; 1 3 2X K B 2 2X D ### 8 8 8 N (LID) 444 8 8 444 8 8 8 8 R (LID) C E %%% 8 8 8 T M (INSULATOR) A F S (INSULATOR) SEATING PLANE %%% 8 H 8 8 DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX ; ;. ;. ;. ; ; ; ; ;. ;. ;.. ;.. ;..+ ;. ;. ;. ; ; ;. ; ;. ; . ; . ; ;. ; ;. ;..+ ;. .+ ;. + MILLIMETERS MIN MAX .; .; ; ; ; ; ; ; .; ; .;. .; ;+ ; ; ; ; . .; . .; ; ; . .; . .; .; + .;+ .; + ! , E ; ; , ; , A CASE 465E–03 ISSUE D NI–400 MRF18030BR3 2X D ### 8 8 ,E ; 8,E 9; ; ,, 8, ,, , 8, ! ;8/ ; ; 8, 9 8,, .;.. ".;' 2! 8 F, !; 8 1 2 2X K 444 8 8 N E R 8 (LID) (LID) 444 C 8 8 8 8 8 F 3 A T A (FLANGE) M %%% 8 8 SEATING PLANE (INSULATOR) 8 H S (INSULATOR) %%% B 8 B (FLANGE) DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX ; ;. ; ;. ; ; ; ; ;. ;. ;.. ;.. ;. ;. ;. ; ; ;. ; ;. ; ;. ; ;. ;..+, ;. .+, ;. +, MILLIMETERS MIN MAX .;. .; .;. .; ; ; ; ; .; ; .;. .; ; ;. ; ; . .;. .; .;. .; .;. .; .;. .; .; +, .;+, .;+, ! , E ; ; , ; , CASE 465F–03 ISSUE B NI–400S MRF18030BSR3 MOTOROLA RF DEVICE DATA MRF18030BR3 MRF18030BSR3 7 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF18030BR3 MRF18030BSR3 8 ◊ MRF18030B/D MOTOROLA RF DEVICE DATA