Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Two–Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — –31 dBc 945 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability CASE 360B–05, STYLE 1 NI–360 MRF9060R1 • Characterized with Series Equivalent Large–Signal Impedance Parameters • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. CASE 360C–05, STYLE 1 NI–360S MRF9060SR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS –0.5, +15 Vdc PD 159 0.91 219 1.25 Watts W/°C Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Operating Junction Temperature TJ 200 °C Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9060R1 MRF9060SR1 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF9060R1 MRF9060SR1 Symbol Max Unit RθJC 1.1 0.8 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF9060R1 MRF9060SR1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) VGS(Q) — 3.7 — Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1.3 Adc) VDS(on) — 0.17 0.4 Vdc gfs — 5.3 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 98 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 50 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2 — pF OFF CHARACTERISTICS ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) DYNAMIC CHARACTERISTICS (continued) MRF9060R1 MRF9060SR1 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 16 17 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 36 40 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — –31 –28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — –16 –9 dB Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 17 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 39 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — –31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — –16 — dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) P1dB — 70 — W Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Gps — 17 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) η — 51 — % Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) MOTOROLA RF DEVICE DATA No Degradation In Output Power MRF9060R1 MRF9060SR1 3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.240″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.180″ x 0.270″ Microstrip 0.350″ x 0.270″ Microstrip 0.270″ x 0.520 x 0.140″ Taper 0.170″ x 0.520″ Microstrip 0.410″ x 0.520″ Microstrip 0.060″ x 0.520″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 0.360″ x 0.270″ Microstrip 0.060″ x 0.270″ Microstrip 0.110″ x 0.060″ Microstrip 0.330″ x 0.060″ Microstrip 0.230″ x 0.060″ Microstrip 0.740″ x 0.060″ Microstrip 0.130″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip Figure 1. 945 MHz Broadband Test Circuit Schematic Table 1. 945 MHz Broadband Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1 Short Ferrite Bead 95F786 Newark B2 Long Ferrite Bead 95F787 Newark C1, C7, C13, C14 47 pF Chip Capacitors, B Case 100B470JP 500X ATC C2, C3, C11 0.8–8.0 Gigatrim Variable Capacitors 44F3360 Newark C4, C5, C8, C9 10 pF Chip Capacitors, B Case 100B100JP 500X ATC C6, C15, C16 10 mF, 35 V Tantalum Chip Capacitor 93F2975 Newark C10 3.0 pF Chip Capacitor, B Case 100B3R0JP 500X ATC C12 0.5 pF Chip Capacitor, B Case (MRF9060) 0.7 pF Chip Capacitor, B Case (MRF9060S) 100B0R5BP 500X 100B0R7BP 500X ATC ATC C17 220 mF Electrolytic Chip Capacitor 14F185 Newark L1, L2 12.5 nH Inductors A04T–5 Coilcraft N1, N2 N–Type Panel Mount, Stripline 3052–1648–10 Avnet WB1, WB2 10 mil Brass Wear Blocks Board Material 30 mil Glass Teflon, εr = 3.55 Copper Clad, 1 oz Cu RF–35–0300 Taconic PCB Etched Circuit Board MRF9060 900 MHz, Rev. 2 MRF9060R1 MRF9060SR1 4 MOTOROLA RF DEVICE DATA CUT OUT AREA MRF9060 900 MHz Figure 2. 930 – 960 MHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF9060R1 MRF9060SR1 5 h 6 &' *+, 6 % ( / 6 7" ! :**; !<4+87;,) =12 *; $3<'>;? .) / 0 %!12( )## $$#%&( 34 !)# !" $#%&'( 34 )# #"#%&( h )#" 0#%5( TYPICAL CHARACTERISTICS / 6 7" 34 )# #"#%&( #7" #7" #7" 6 &' . 6 !12 . 6 !12 Figure 4. Power Gain versus Output Power / 6 7" 7" 7" 7" 6 &' . 6 !12 . 6 !12 *+,) %"$( Figure 5. Intermodulation Distortion versus Output Power 6 &' / 6 7" . 6 !12 . 6 !12 h 8&8 34 34)# #"#%&( !) !"#$#%&'( *+,) %"$( ,9#8&8 *+,) %"$( Figure 6. Intermodulation Distortion Products versus Output Power MRF9060R1 MRF9060SR1 6 6 &' / 6 7" . 6 !12 ,9#8&8 h)#"# 0#%5( !)# !"#$#%&'( Figure 3. Class AB Broadband Circuit Performance *+,) %"$( " Figure 7. Power Gain and Efficiency versus Output Power MOTOROLA RF DEVICE DATA 34 34)# #"#%&( 6 &' / 6 7" . 6 !12 . 6 !12 h ! h)#"# 0#%5( !)# !"#$#%&'( *+,) %"$( Figure 8. Power Gain, Efficiency, and IMD versus Output Power MOTOROLA RF DEVICE DATA MRF9060R1 MRF9060SR1 7 * 6 Ω >; . 6 !12 . 6 !12 . 6 !12 @ . 6 !12 6 ) / 6 7") *+, 6 f MHz Zin ZOL* Ω Zin Ω 930 0.80 + j0.10 2.08 – j0.65 945 0.80 + j0.05 2.07 – j0.38 960 0.81 + j0.10 2.04 – j0.37 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. *,A @ :<4 '9*4; B<4& *; ,8<&*..4 B,:; ?<>;) *+,3+, 3*:8) &8<>; ..>'>;'C <;& >;,87*&+D<,>*; &>4,*8,>*; ;3+, !<,'9>;? ,:*8= +,3+, !<,'9>;? ,:*8= >' ;&8 4, Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MRF9060R1 MRF9060SR1 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF9060R1 MRF9060SR1 9 NOTES MRF9060R1 MRF9060SR1 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS Q <<< 2X G B ! " ! ! $A ! $$ " " $ "$! 0! ! $A 1 ! $ 1 $ ! "$ % ( ""0 ! "E" 0 1 3 B 2 (FLANGE) D BBB ! " K 2X 2X ! ! R (LID) ''' ''' N (LID) " ! ! ! " ! ! F H ! C E S (INSULATOR) T <<< SEATING PLANE BBB M ! " ! (INSULATOR) A ! " ! ! CASE 360B–05 ISSUE F NI–360 MRF9060R1 A ! DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX #$ # # # MILLIMETERS MIN MAX #$ # # # $0 A " " $ A A (FLANGE) B 1 $A ! $$ " " $ "$! 0! ! $A 1 ! $ 1 $ ! "$ % ( ""0 ! "E" 0 2 B (FLANGE) 2X 2X K ! D BBB ! " ! R (LID) ''' ! " ! N (LID) ''' ! " ! ! ! F H E C S (INSULATOR) PIN 3 T M SEATING PLANE <<< ! " ! (INSULATOR) BBB ! " ! ! MOTOROLA RF DEVICE DATA CASE 360C–05 ISSUE D NI–360S MRF9060SR1 ! DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX # # # MILLIMETERS MIN MAX # # # $0 A " " $ MRF9060R1 MRF9060SR1 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9060R1 MRF9060SR1 12 ◊ MRF9060/D MOTOROLA RF DEVICE DATA