Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Two–Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — –32.5 dBc 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power • Excellent Thermal Stability CASE 360B–05, STYLE 1 NI–360 MRF9030R1 • Characterized with Series Equivalent Large–Signal Impedance Parameters • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. CASE 360C–05, STYLE 1 NI–360S MRF9030SR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 68 Vdc Gate–Source Voltage VGS –0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9030R1 PD 92 0.53 Watts W/°C Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9030SR1 PD 117 0.67 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF9030R1 MRF9030SR1 Symbol Max Unit RθJC 1.9 1.5 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF9030R1 MRF9030SR1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) — 3.8 — Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 0.7 Adc) VDS(on) — 0.19 0.4 Vdc gfs — 3 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 49.5 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 26.5 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1 — pF OFF CHARACTERISTICS ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS (continued) MRF9030R1 MRF9030SR1 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 18 19 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 37 41.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — –32.5 –28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — –15.5 –9 dB Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 19 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 41.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — –33 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — –14 — dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) P1dB — 30 — W Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Gps — 19 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) η — 60 — % Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) MOTOROLA RF DEVICE DATA No Degradation In Output Power MRF9030R1 MRF9030SR1 3 B1 B2 C1, C8, C13, C14 C2, C4 C3 C5, C6 C7, C15, C16 C9, C10 C11 C12 C17 L1, L2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Board Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors, B Case 0.8 pF to 8.0 pF Trim Capacitors 3.9 pF Chip Capacitor, B Case 7.5 pF Chip Capacitors, B Case 10 µF, 35 V Tantalum Capacitors 10 pF Chip Capacitors, B Case 9.1 pF Chip Capacitor, B Case 0.6 pF to 4.5 pF Trim Capacitor 220 µF, 50 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors 0.260″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.215″ x 0.270″ Microstrip 0.315″ x 0.270″ Microstrip 0.160″ x 0.270″ x 0.520″, Taper 0.285″ x 0.520″ Microstrip 0.140″ x 0.270″ Microstrip 0.450″ x 0.270″ Microstrip 0.250″ x 0.060″ Microstrip 0.720″ x 0.060″ Microstrip 0.490″ x 0.060″ Microstrip 0.290″ x 0.060″ Microstrip Taconic RF–35–0300, (εr = 3.5) CAX1/CAX1 Figure 1. 945 MHz Broadband Test Circuit Schematic CUT OUT AREA MRF9030 900 MHz Figure 2. 945 MHz Broadband Test Circuit Component Layout MRF9030R1 MRF9030SR1 4 MOTOROLA RF DEVICE DATA 1;;(*;.;)#+ η " #$ %&' " ( )*+ , " -. /%%01 234 %0 56$708 ! 1 ;* ;55;)#+ η1;.;**:;)<+ !1 *! .;5;)#$+ TYPICAL CHARACTERISTICS 91 *, *: )!34+ 1;;(*;.;)#+ = -. = -. -. = " #$ 9 " !341 9 " = !34 , " -. -. -. -. %&'1 (* )(.5+ * Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power " #$ , " -. 9 " !341 9 " = !34 ># >#> '? >#> " #$ 9 " !341 9 " = !34 %&'1 (* )(.5+ * 1;;(*;.;)#+ !1 *! .;5;)#$+ , " -. η '? >#> " #$ , " -. 9 " !34 = %&'1 (* )(.5+ * %&'1 (* )(.5+ .= Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power MOTOROLA RF DEVICE DATA η1;.;**:;)<+ !1 *! .;5;)#$+ Figure 3. Class AB Broadband Circuit Performance MRF9030R1 MRF9030SR1 5 1;;(*;.;)#+ " #$ , " -. 9 " !341 9 " = !34 η ! η1;.;**:;)<+ !1 *! .;5;)#$+ %&'1 (* )(.5+ * Figure 8. Power Gain, Efficiency and IMD versus Output Power MRF9030R1 MRF9030SR1 6 MOTOROLA RF DEVICE DATA % " Ω A 70 9 " !34 9 " !34 9 " !34 9 " !34 " 1 , " -.1 %&' " ( * f MHz Zin ZOL* Ω Zin Ω 930 1.34 – j0.1 3.175 + j0.09 945 1.36 – j0.2 3.1 + j0.08 960 1.4 – j0.14 3.0 + j0.05 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. %'@ A /6 $?%0 B6# %0 '>6#%99 B'/0 86701 %&'&' %/>1 #>670 997$70$C 60# 70'>-%#&D6'7%0 #7'%>'7%0= 0&' !6'$?708 '/%>2 &'&' !6'$?708 '/%>2 7$ 0#> ' Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF9030R1 MRF9030SR1 7 NOTES MRF9030R1 MRF9030SR1 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF9030R1 MRF9030SR1 9 NOTES MRF9030R1 MRF9030SR1 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS Q 666 2X G B ! . ! ! *5@ = ** !*55 . *.*5 * .5!* :=!= = !*5@ 3= = !*5 3 5 !*.5 * = )=+ .(.: ! .E.* := 1 3 B 2 (FLANGE) D BBB ! . K 2X 2X ! ! R (LID) $$$ $$$ N (LID) . ! ! ! . ! ! F H ! C E S (INSULATOR) T 666 SEATING PLANE BBB M ! . ! (INSULATOR) A ! . ! ! CASE 360B–05 ISSUE F NI–360 MRF9030R1 A ! DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX = = = = = = = = = = = = =;5 = = = = = = = = = = = = = = =;* =;* =;* MILLIMETERS MIN MAX = = = = = = = = = = = = =;5 = = = = = = = = = = = = = = =;* =;* =;* 5:* @ = . = .* = 5 * A A (FLANGE) B 1 *5@ = ** !*55 . *.*5 * .5!* :=!= = !*5@ 3= = !*5 3 5 !*.5 * = )=+ .(.: ! .E.* := 2 B (FLANGE) 2X 2X K ! D BBB ! . ! R (LID) $$$ ! . ! N (LID) $$$ ! . ! ! ! F H E C S (INSULATOR) PIN 3 T M SEATING PLANE 666 ! . ! (INSULATOR) BBB ! . ! ! MOTOROLA RF DEVICE DATA CASE 360C–05 ISSUE D NI–360S MRF9030SR1 ! DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX = = = = = = = = = = = = = = = = = = = = = = = = =;* =;* =;* MILLIMETERS MIN MAX = = = = = = = = = = = = = = = = = = = = = = = = =;* =;* =;* 5:* @ = . = .* = 5 * MRF9030R1 MRF9030SR1 11 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9030R1 MRF9030SR1 12 ◊ MRF9030/D MOTOROLA RF DEVICE DATA