MOTOROLA MRF9030

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by MRF9030/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
• Typical Two–Tone Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — –32.5 dBc
945 MHz, 30 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
• Excellent Thermal Stability
CASE 360B–05, STYLE 1
NI–360
MRF9030R1
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
CASE 360C–05, STYLE 1
NI–360S
MRF9030SR1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
68
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
MRF9030R1
PD
92
0.53
Watts
W/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
MRF9030SR1
PD
117
0.67
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +200
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MRF9030R1
MRF9030SR1
Symbol
Max
Unit
RθJC
1.9
1.5
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF9030R1 MRF9030SR1
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.7 Adc)
VDS(on)
—
0.19
0.4
Vdc
gfs
—
3
—
S
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
49.5
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
26.5
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1
—
pF
OFF CHARACTERISTICS
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
DYNAMIC CHARACTERISTICS
(continued)
MRF9030R1 MRF9030SR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
18
19
—
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
37
41.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
–32.5
–28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
–15.5
–9
dB
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
19
—
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
41.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
–33
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
–14
—
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f1 = 945.0 MHz)
P1dB
—
30
—
W
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f1 = 945.0 MHz)
Gps
—
19
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f1 = 945.0 MHz)
η
—
60
—
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
Ψ
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
MOTOROLA RF DEVICE DATA
No Degradation In Output Power
MRF9030R1 MRF9030SR1
3
B1
B2
C1, C8, C13, C14
C2, C4
C3
C5, C6
C7, C15, C16
C9, C10
C11
C12
C17
L1, L2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Board
Short Ferrite Bead
Long Ferrite Bead
47 pF Chip Capacitors, B Case
0.8 pF to 8.0 pF Trim Capacitors
3.9 pF Chip Capacitor, B Case
7.5 pF Chip Capacitors, B Case
10 µF, 35 V Tantalum Capacitors
10 pF Chip Capacitors, B Case
9.1 pF Chip Capacitor, B Case
0.6 pF to 4.5 pF Trim Capacitor
220 µF, 50 V Electrolytic Capacitor
12.5 nH Surface Mount Inductors
0.260″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.215″ x 0.270″ Microstrip
0.315″ x 0.270″ Microstrip
0.160″ x 0.270″ x 0.520″, Taper
0.285″ x 0.520″ Microstrip
0.140″ x 0.270″ Microstrip
0.450″ x 0.270″ Microstrip
0.250″ x 0.060″ Microstrip
0.720″ x 0.060″ Microstrip
0.490″ x 0.060″ Microstrip
0.290″ x 0.060″ Microstrip
Taconic RF–35–0300,
(εr = 3.5) CAX1/CAX1
Figure 1. 945 MHz Broadband Test Circuit Schematic
CUT OUT AREA
MRF9030
900 MHz
Figure 2. 945 MHz Broadband Test Circuit Component Layout
MRF9030R1 MRF9030SR1
4
MOTOROLA RF DEVICE DATA
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η
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TYPICAL CHARACTERISTICS
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1;;(*;.;)#+
=
-.
=
-.
-.
=
" #$
9 " !341 9 " = !34
, " -.
-.
-.
-.
%&'1 (* )(.5+ *
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
" #$
, " -.
9 " !341 9 " = !34
># >#>
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9 " !341 9 " = !34
%&'1 (* )(.5+ *
1;;(*;.;)#+
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, " -.
η
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, " -.
9 " !34
=
%&'1 (* )(.5+ *
%&'1 (* )(.5+ .=
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
MOTOROLA RF DEVICE DATA
η1;.;**:;)<+
!1 *!
.;5;)#$+
Figure 3. Class AB Broadband Circuit Performance
MRF9030R1 MRF9030SR1
5
1;;(*;.;)#+
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9 " !341 9 " = !34
η
!
η1;.;**:;)<+
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%&'1 (* )(.5+ *
Figure 8. Power Gain, Efficiency and IMD
versus Output Power
MRF9030R1 MRF9030SR1
6
MOTOROLA RF DEVICE DATA
% " Ω
A
70
9 " !34
9 " !34
9 " !34
9 " !34
" 1 , " -.1 %&' " ( *
f
MHz
Zin
ZOL*
Ω
Zin
Ω
930
1.34 – j0.1
3.175 + j0.09
945
1.36 – j0.2
3.1 + j0.08
960
1.4 – j0.14
3.0 + j0.05
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
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A /6 $?%0 B6# %0 '>6#%99 B'/0 86701 %&'&'
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Z
in
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Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF9030R1 MRF9030SR1
7
NOTES
MRF9030R1 MRF9030SR1
8
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF9030R1 MRF9030SR1
9
NOTES
MRF9030R1 MRF9030SR1
10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
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CASE 360B–05
ISSUE F
NI–360
MRF9030R1
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MOTOROLA RF DEVICE DATA
CASE 360C–05
ISSUE D
NI–360S
MRF9030SR1
!
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A
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MRF9030R1 MRF9030SR1
11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
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HOME PAGE: http://www.motorola.com/semiconductors/
MRF9030R1 MRF9030SR1
12
◊
MRF9030/D
MOTOROLA RF DEVICE DATA