Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficiency = 50% 40 W, 500 MHz TMOS BROADBAND RF POWER FET • Typical Performance at 175 MHz, 28 Vdc Output Power = 40 Watts Gain = 17 dB Efficiency = 60% • Excellent Thermal Stability, Ideally Suited for Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Low Crss — 4.5 pF @ VDS = 28 Volts • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 412–01, Style 1 1 3 5 FLANGE 4 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain–Gate Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc VGS ± 40 Adc Drain Current — Continuous ID 8.0 ADC Total Device Dissipation @ TC = 25°C Derate above 25°C PD 175 1.0 Watts °C/W Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C RθJC 1.0 °C/W Rating Gate–Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF166W 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 65 — — — — 1.0 — — 1.0 1.0 3.0 6.0 600 800 — — 30 — — 35 — — 4.5 — 11 13 — 45 50 — Unit OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 5.0 mA) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS Gate–Source Leakage Current (VGS = 40 Vdc, VDS = 0 Vdc) IGSS Vdc mA µA ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS= 10 Vdc, ID = 25 mA) VGS(th) Forward Transconductance (VDS= 10 Vdc, ID = 1.5 A) gfs Vdc mS DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Output Capacitance (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Crss pF pF pF FUNCTIONAL CHARACTERISTICS (2) Common Source Power Gain (VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) Gps Drain Efficiency (VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) η Electrical Ruggedness (VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) Load VSWR = 30:1, All phase angles at frequency of test Ψ dB % No Degradation in Output Power (1) Each transistor chip measured separately. (2) Both transistor chips operating in a push–pull amplifier. MRF166W 2 MOTOROLA RF DEVICE DATA B RFC1 R7 A R1 C14 R2 D1 C22 VDD 28 V + C17 + C18 Vdc – – C16 C15 RFC2 C10 A C21 T1 Z2 L1 C2 RF INPUT C13 L3 Z1 L2 T2 Z7 D.U.T. Z5 C6 C5 C4 C1 R3 Z3 C23 C3 C8 Z8 R4 C7 RF OUTPUT Z6 Z4 L4 C9 Z10 Z9 R5 R6 C11 A C20 C12 RFC3 B C19 L1, L2 L3, L4 0.065″ 0.116″ 0.265″ C1, C2, C8, C9, C12, C13, C15 C3 C4 C5 C6 C7 C10, C11, C14, C19, C20, C21, C22 C16, C17 C18 C23 D1 L1, L2 L3, L4 270 pF, Chip Cap 5.6 pF, Chip Cap 20 pF, Chip Cap 0 – 20 pF, Johanson* 8.2 pF, Chip Cap 15 pF, Chip Cap 0.01 µF 680 pF, Feedthru 10 µF, 50 V 0 – 10 pF, Johanson* IN5343 – Motorola Zener Hair Pin Inductor #18 AWG, 0.065 W x 0.265 H Hair Pin Inductor #18 AWG, 0.116 W x 0.445 H 0.455″ RFC1 RFC2, RFC3 R1 R2 R3, R6 R4 R5 R7 T1, T2 Z1, Z2 Z3, Z4 Z5, Z6 Z7, Z9 Z8, Z10 Ferroxcube VK–200–19/4B 10T, ID = 1/4″, 18 AWG 10 kΩ, 10T 9.2 kΩ, 1/2 W 330 Ω, 1.0 W 520 Ω, 1/4 W 1.5 kΩ, 1/2 W Balun 2.0″, 50 Ω Semi–Rigid Coax 0.120 x 0.467″ 0.120 x 0.55″ * 0.120 x 0.49″ 0.120 x 0.85″ 0.120 x 0.6″ for C6 * C4, C5 Center of Z3 and Z4 Board Material – Teflon Fiberglass Dielectric Thickness = 0.030″, εr = 2.55 Copper Clad, 2.0 oz. Copper Figure 1. MRF166 400 MHz Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF166W 3 50 40 35 500 MHz 30 25 20 15 10 VDD = 28 Vdc IDQ = 200 mA 5 0 0 1 2 3 Pin, INPUT POWER (WATTS) 35 2.0 W 30 1.0 W 25 20 15 0.5 W 10 5 0 12 4 Figure 2. Output Power versus Input Power 26 28 80 TYPICAL DEVICE SHOWN, VGS(th) = 3.0 V 20 f = 400 MHz 15 VGS = 0 V f = 1.0 MHz 90 C, CAPACITANCE (pF) Pout , OUTPUT POWER (WATTS) 16 18 20 22 24 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 100 VDD = 28 Vdc IDQ = 100 mA 30 25 14 Figure 3. Output Power versus Voltage 40 35 Pin = 3.0 W f = 400 MHz IDQ = 100 mA 40 400 MHz Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 45 f = 175 MHz 45 10 70 Coss 60 50 40 Ciss 30 20 5 Crss 10 0 –10 – 9 – 8 –7 – 6 – 5 – 4 – 3 – 2 –1 0 VGS, GATE–SOURCE VOLTAGE (VOLTS) 1 2 Figure 4. Output Power versus Gate Voltage MRF166W 4 3 0 0 4 8 12 16 20 24 28 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) Figure 5. Capacitance versus Voltage MOTOROLA RF DEVICE DATA f = 500 MHz Zin 400 ZOL* f = 500 MHz 400 175 175 Zo = 50 Ω VDD = 28 Vdc, IDQ = 100 mA, Pout = 40 W f MHz Zin Ohms ZOL* Ohms 175 3.7 – j 22.4 15.2 – j 16.6 400 3.6 – j 10.99 10.3 – j 7.99 500 2.6 – j 3.2 10.2 + j 0.5 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively. Table 1. Input and Output Impedances Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF166W 5 PACKAGE DIMENSIONS –A– U Q 2 PL G 0.51 (0.020) 1 2 3 4 K M T A –B– 5 D 4 PL 0.51 (0.020) J N M T A M B M E C H –T– SEATING PLANE M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K N Q U INCHES MIN MAX 0.965 0.985 0.245 0.265 0.165 0.185 0.050 0.070 0.070 0.080 0.254 BSC 0.095 0.105 0.003 0.006 0.625 0.675 0.495 0.520 0.120 0.140 0.725 BSC STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 24.52 25.01 6.23 6.73 4.20 4.69 1.27 1.77 1.78 2.03 6.45 BSC 2.42 2.66 0.08 0.15 15.88 17.14 12.58 13.20 3.05 3.55 18.42 BSC DRAIN DRAIN GATE GATE SOURCE CASE 412–01 ISSUE O Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF166W 6 ◊ *MRF166W/D* MRF166W/D MOTOROLA RF DEVICE DATA