AP4953D
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D2
▼ Simple Drive Requirement
D2
D1
▼ Low On-resistance
D1
▼ Fast Switching
BVDSS
-30V
RDS(ON)
53mΩ
ID
-5A
G2
S2
PDIP-8
G1
S1
Description
D2
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
G2
G1
S2
S1
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 30
V
±20
V
3
-5
A
3
-4
A
- 20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200922031
AP4953D
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
RDS(ON)
-30
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.1
-
V/℃
Static Drain-Source On-Resistance2
VGS=-10V, ID=-5A
-
-
53
mΩ
VGS=-4.5V, ID=-4A
-
-
90
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=-10V, ID=-5A
-
6
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
ID=-5A
-
9
15
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
Min. Typ. Max. Units
2
±100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
VDS=-15V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=15Ω
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
500
800
pF
Coss
Output Capacitance
VDS=-15V
-
217
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
153
-
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Min. Typ. Max. Units
VSD
Forward On Voltage
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
-
21.5
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 90 ℃/W when mounted on Min. copper pad.
AP4953D
20
20
15
-ID , Drain Current (A)
15
-ID , Drain Current (A)
-10V
-8.0V
-6.0V
-10V
-8.0V
-6.0V
V GS =-4.0V
10
5
10
V GS =-4.0V
5
o
o
T A =25 C
T A =150 C
0
0
0
1
2
3
4
0
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
Fig 2. Typical Output Characteristics
1.8
70
65
I D =-5A
T A =25 ℃
I D =-5A
1.6
V GS =10V
Normalized RDS(ON)
60
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
55
50
45
1.4
1.2
1.0
0.8
40
0.6
35
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
100.00
10.00
T j =150 o C
-VGS(th) (V)
-IS(A)
2
T j =25 o C
1.00
1
0.10
0.01
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4953D
f=1.0MHz
10000
I D =-5.3A
V DS =-24V
10
1000
8
Ciss
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
Coss
Crss
100
4
2
10
0
0
2
4
6
8
10
12
14
1
16
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
-ID (A)
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
0.1
1
10
100
Normalized Thermal Response (Rthja)
Duty Factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=90oC/W
0.001
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
PDM
Single Pulse
0.01
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q