Silicon Rectifier Diodes Use Advantages DO-35 Glass Package 1N645 to 649 or 1N645-1 to 649-1 Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers. May be used in hostile environments where hermeticity and reliability are important i.e. (Military and Aero/Space). MIL-S- 19500/ 240 approvals. Available up to JANTXV-1 level. "S" level screening capability to Source Control Drawings. Features D O -3 5 G la ss P a ck a g e Six Sigma quality Lead Dia. 0.018-0.022" Humidity proof glass 0.458-0.558 mm Metallurgically bonded Thermally matched system D ia . 1 .0 " L e n g th No thermal fatigue 2 5 .4 m m mm (M in .) 1.53-2.28 mm High surge capability Sigma Bond™ plated contacts 100% guaranteed solderability (DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available 0.06 -0 .09" 0.12 0-.200 " 3.05 -5 .08- Absolute Maximum Ratings Symbol Power Dissipation at 3/8" from the body, TL= 75 oC Average Forward Rectified Current at TL Ptot o = 75 C Operating and Storage Temperature Range Thermal Impedance Value Unit 600 IAV 400 TO&S -65 to 175 ZqJX mWatts mAmps o C o 35 C/W Detail Specifications (V R) Breakdown Voltage (MIN.) @ 100µA (BV) Volts Volts Reverse Voltage Type Maximum Forward Maximum Average Rectified Current Voltage Reverse Leakage Current _______________ Drop _______________ (IO ) (IO ) (VF) @ IF = 400mA (IR) @ VR 25° C 150° C (MIN.) (MAX.) 25° C 100° C Amps 1N645,-1 225 275 1N646,-1 300 360 1N647,-1 400 480 1N648,-1 500 600 1N649,-1 600 720 Note 1: Surge Current @TA = +25° C to Amps 0.4 0.4 0.4 0.4 0.4 +150° C, for 1 0.15 0.15 0.15 0.15 0.15 Second Volts 1.0 1.0 1.0 1.0 1.0 Maximum Typical Surge Junction Current Capacitance (I FSM) @ -12V (NOTE 1) (C O ) µA µA Amps pF 0.2 0.2 0.2 0.2 0.2 15 15 20 20 25 3 3 3 3 3 9 9 9 9 9 For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial. 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 1N645-1 thru 1N649-1 Silicon Rectifier Diodes DO-35 Glass Package DO-35 DERATING (175 C Tj) D O - 35 PO W ER D ER AT IN G C U R V E 500 P ower Dissipated (MilliWatts) 400 300 200 100 0 0 20 40 60 80 100 120 140 160 T e m p e ra tu re ( 3/8" fro m b od y) C 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 180 1N645-1 thru 1N649-1 Silicon Rectifier Diodes DO-35 Glass Package Silicon Rectifier Diodes 1N645-1 thru 1N649-1 1 N 6 4 5 - 6 4 9 R ec tifie r D io d e s Typ ic al Ir V r = P IV ; Ta = +1 50 C 1N 6 49 -1 6 .9 6 .7 1 N 6 48 6 .5 Ir (Typic al V alues ) mic roA mps 6 .3 6 .1 5 .9 1 N 6 46 5 .7 1N 6 47 -1 5 .5 5 .3 5 .1 4 .9 4 .7 1N 6 45 -1 4 .5 2 00 3 00 4 00 5 00 V r - V o lts 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 6 00