ISC 2N3183

Inchange Semiconductor
Product Specification
2N3183
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-40
V
VCEO
Collector-emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
-5
A
75
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.17
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
R(th) jc
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N3183
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter sustaining voltage
IC=-0.2A ;IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=-5A; IB=-1A
-1.5
V
VBE(on)
Base-emitter on voltage
IC=-5A ; VCE=-4V
-2.0
V
ICEO
Collector cut-off current
VCE=Rated VCEO; IB=0
-5.0
mA
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-0.3A ; VCE=-4V
30
hFE-2
DC current gain
IC=-3A ; VCE=-4V
15
2
MIN
TYP.
MAX
-40
UNIT
V
Inchange Semiconductor
Product Specification
2N3183
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3