Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol 体 导 电半 Absolute maximum ratings(Ta=℃) SYMBOL VCBO 固 PARAMETER 2N5605 Collector-base voltage 2N5607/5609 2N5611 VCEO VEBO G N A H INC Collector-emitter voltage R O T DUC CONDITIONS 2N5605 N O C I Open emitter SEM 2N5607/5609 Open base 2N5611 Emitter-base voltage VALUE UNIT -80 -100 V -120 -60 -80 V -100 Open collector -5 V -5 A 25 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 4.37 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5605 VCEO(SUS) Collector-emitter sustaining voltage 2N5607/5609 TYP. MAX UNIT -60 IC=50mA ;IB=0 2N5611 VCEsat MIN V -80 -100 Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.5 V VBE Base-emitter on voltage IC=-2.5A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA ICEO Collector cut-off current VCE= Rated VCEO,IB=0 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE 体 导 电半 固 2N5605/5609 DC current gain D N O IC IC=-2.5A ; VCE=-5V 2N5607/5611 M E S NG 2N5605/5609 fT CHA Transition frequency IN R O T UC 70 200 30 90 70 IC=-0.5A ; VCE=-10V 2N5607/5611 2 MHz 60 Inchange Semiconductor Product Specification 2N5605 2N5607 2N5609 2N5611 Silicon PNP Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA Fig.2 outline dimensions 3 R O T DUC