Inchange Semiconductor Product Specification 2N5873 2N5874 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL 体 半导 固电 VCBO PARAMETER VEBO OND 2N5873 Collector-base voltage Open emitter IC M E ES 2N5874 ANG 2N5873 VCEO Collector-emitter voltage INCH R O T UC CONDITIONS Open collector UNIT 60 V 80 60 Open base 2N5874 Emitter-base voltage VALUE V 80 5 V 7 A 115 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5873 2N5874 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5873 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 60 IC=0.1A ;IB=0 V 2N5874 80 VCEsat Collector-emitter saturation voltage IC=5A;IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V Collector cut-off current VCB=ratedVCBO; IB=0 1.0 mA 2.0 mA ICBO 2N5873 ICEO IEBO hFE fT VCE=30V; IB=0 Collector cut-off current 导体 半 电 2N5874 VCE=40V; IB=0 Emitter cut-off current VEB=5V; IC=0 DC current gain IC=2.5A ; VCE=4V 固 IC M E ES G N A CH Trainsistion frequency IN C U D ON IC=0.5A ; VCE=10V 2 TOR 20 4 1.0 mA 100 MHz Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5873 2N5874 PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3