ISC 2N5873

Inchange Semiconductor
Product Specification
2N5873 2N5874
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector saturation voltage
APPLICATIONS
・For medium-speed switching and
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
体
半导
固电
VCBO
PARAMETER
VEBO
OND
2N5873
Collector-base voltage
Open emitter
IC
M
E
ES
2N5874
ANG
2N5873
VCEO
Collector-emitter voltage
INCH
R
O
T
UC
CONDITIONS
Open collector
UNIT
60
V
80
60
Open base
2N5874
Emitter-base voltage
VALUE
V
80
5
V
7
A
115
W
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.17
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5873 2N5874
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5873
VCEO(SUS)
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
60
IC=0.1A ;IB=0
V
2N5874
80
VCEsat
Collector-emitter saturation voltage
IC=5A;IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.5A
1.5
V
Collector cut-off current
VCB=ratedVCBO; IB=0
1.0
mA
2.0
mA
ICBO
2N5873
ICEO
IEBO
hFE
fT
VCE=30V; IB=0
Collector cut-off current
导体
半
电
2N5874
VCE=40V; IB=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=2.5A ; VCE=4V
固
IC
M
E
ES
G
N
A
CH
Trainsistion frequency
IN
C
U
D
ON
IC=0.5A ; VCE=10V
2
TOR
20
4
1.0
mA
100
MHz
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5873 2N5874
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3