Inchange Semiconductor Product Specification 2N6226 2N6227 2N6228 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For high power audio;stepping motor and other linear applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 体 导 电半 Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO VCEO PARAMETER CONDITIONS N O C I 2N6226 M E S NG Collector-base voltage A H C IN Collector-emitter voltage 2N6227 Open emitter 2N6228 2N6226 2N6227 Open base 2N6228 VEBO Emitter-base voltage R O T DUC VALUE UNIT -100 -120 V -140 -100 -120 V -140 Open collector -7 V -6 A 150 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.92 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6226 2N6227 2N6228 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6226 VCEO(SUS) Collector-emitter sustaining voltage 2N6227 TYP. MAX UNIT -100 IC=-0.2A ;IB=0 V -120 -140 2N6228 VCEsat MIN Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.2 V VBE Base-emitter on voltage IC=-3A ; VCE=-2V -1.8 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 -5.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 hFE fT 体 导 电半 固 D N O C I M E 2N6226 S G N HA DC current gain INC Transition frequency 2N6227 R O T UC IC=-3A ; VCE=-2V 2N6228 IC=-0.5A ; VCE=-4V 2 -0.1 25 100 20 80 15 60 1 mA MHz Inchange Semiconductor Product Specification 2N6226 2N6227 2N6228 Silicon PNP Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI S G N HA INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 R O T DUC