Inchange Semiconductor Product Specification 2N6124 2N6125 2N6126 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to PNP type : 2N6121 ;2N6122 ;2N6123 APPLICATIONS ・For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol 体 导 电半 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER 固 CONDITIONS 2N6124 Collector-base voltage 2N6125 2N6126 VCEO VEBO CHA Collector-emitter voltage IN Emitter-base voltage 2N6125 UNIT -45 N O C EMI Open emitter NG S 2N6124 R O T DUC VALUE Open base 2N6126 -60 V -80 -45 -60 V -80 Open collector -5 V IC Collector current -4 A ICM Collector current-peak -8 A IB Base current -1 A PT Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 3.125 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N6124 2N6125 2N6126 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6124 VCEO(SUS) Collector-emitter sustaining voltage 2N6125 MIN TYP. MAX UNIT -45 IC=-0.1A ;IB=0 2N6126 V -60 -80 VCEsat-1 Collector-emitter saturation voltage IC=-1.5A;IB=-0.15A -0.6 V VCEsat-2 Collector-emitter saturation voltage IC=-4.0A;IB=-1.0A -1.4 V VBE(on) Base-emitter on voltage IC=-1.5A ; VCE=-2V -1.2 V VCE=-45V;VBE=1.5V TC=125℃ VCE=-60V;VBE=1.5V TC=125℃ VCE=-80V;VBE=1.5V TC=125℃ -0.1 -2.0 -0.1 -2.0 -0.1 -2.0 mA 2N6124 ICEX Collector cut-off current 2N6125 体 导 电半 2N6126 ICEO IEBO hFE-1 固 Collector cut-off current Emitter cut-off current VCE=-45V;IB=0 2N6125 VCE=-60V;IB=0 2N6126 VCE=-80V;IB=0 N O C EMI NG S A H C IN DC current gain 2N6124 R O T DUC VEB=-5V; IC=0 -1.0 mA -1.0 mA 2N6124 2N6125 25 100 20 80 IC=-1.5A ; VCE=-2V 2N6126 2N6124 10 hFE-2 DC current gain 2N6125 IC=-4A ; VCE=-2V 2N6126 fT Transition frequency 7 IC=-1A ; VCE=-4V 2 2.5 MHz Inchange Semiconductor Product Specification 2N6124 2N6125 2N6126 Silicon PNP Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA R O T DUC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3