ISC 2N5493

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2N5493
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 55V(Min)
·Low Saturation Voltage: VCE (sat)= 1V(Max)@IC= 2.5A
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEV
VCER
PARAMETER
VALUE
UNIT
75
V
75
V
65
V
Collector-Base Voltage
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
RBE= 100Ω
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
Base Current
3
A
PC
Collector Power Dissipation
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
B
TJ
Tstg
1.8
W
50
150
℃
-65~150
℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.5
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
70
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2N5493
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ;IB= 0
55
V
VCER(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ; RBE= 100Ω
65
V
VCEV(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ; VBE= -1.5V
75
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 0.25A
1.0
V
VBE(on)
Base-Emitter On Voltage
IC= 2.5A ; VCE= 4V
1.3
V
ICEV
Collector Cutoff Current
VCE= 70V; VBE= -1.5V
VCE= 70V; VBE= -1.5V;TC= 125℃
1.0
5.0
mA
ICER
Collector Cutoff Current
VCE= 55V; RBE= 100Ω
VCE= 55V; RBE= 100Ω; TC= 125℃
0.5
3.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE
DC Current Gain
IC= 2.5A ; VCE= 4V
20
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 4V
0.8
fT
CONDITIONS
MIN
MAX
UNIT
100
MHz
Switching Times
ton
Turn-On Time
5
μs
15
μs
IC= 2.5A; IB1= -IB2= 0.25A
toff
Turn-Off Time
isc Website:www.iscsemi.cn
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