isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDV92/94/96 DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -45V(Min)- BDV92; -60V(Min)- BDV94 -80V(Min)- BDV96 ·Complement to Type BDV91/93/95 APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCER VCEO VEBO PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage VALUE BDV92 -60 BDV94 -80 BDV96 -100 BDV92 -60 BDV94 -80 BDV96 -100 UNIT V V Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current -7 A IE Emitter Current -14 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDV91/93/95 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV92 VCEO(SUS) Collector-Emitter Sustaining Voltage BDV94 MIN TYP. MAX UNIT -60 IC= -100mA ;IB=0 BDV96 V -80 -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A -3.0 V VBE(sat) Base -Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.6 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V -1.6 V ICEO Collector Cutoff Current VCE= VCEOmax;IB= 0 -0.2 mA ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 1 VCB= /2VCBOmax;IE= 0; TJ= 150℃ -0.1 -1.0 mA IEBO Emitter Cutoff Current VEB= -7V; IC=0 -0.1 mA hFE-1 DC Current Gain IC= -4A ; VCE= -4V 20 hFE-2 DC Current Gain IC= -10A ; VCE= -4V 5 Current-Gain—Bandwidth Product IC= -0.5A ;VCE= -10V 4 fT B B MHz Switching times ton Turn-on Time toff Turn-off Time tf IC= -4A; IB1= -IB2= -0.4A; VCC= -30V Fall Time isc Website：www.iscsemi.cn 2 0.3 μs 0.7 μs 0.3 μs