isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD797 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min.) ·Low Saturation Voltage ·Complement to Type BD798 APPLICATIONS ·Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. 5 n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 60 60 V V V IC Collector Current-Continuous 8 A IB Base Current-Continuous 3 A PC Collector Power Dissipation TC=25℃ 65 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.92 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD797 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 2V 1.6 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT CONDITIONS w isc Website：www.iscsemi.cn TYP. MAX 60 B n c . i m e s c is . w w Current-Gain—Bandwidth Product MIN IC= 1A ; VCE= 2V 40 IC= 3A ; VCE= 2V 25 IC= 0.25A; VCE= 10V, ftest= 1MHz 3 UNIT V MHz