isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5240 DESCRIPTION ·High Voltage: VCEO(SUS)= 300V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) VALUE UNIT Collector-Base Voltage 375 V VCER(SUS) Collector-Emitter Voltage RBE≤50Ω 350 V VCEO(SUS) Collector-Emitter Voltage 300 V Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Current 2 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 200 ℃ -65~200 ℃ SYMBOL VCBO VEBO Tstg PARAMETER Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.75 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5240 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;IB= 0 300 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;RBE≤ 50Ω 350 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.02A; IC= 0 6 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.125A 5.0 V VBE(on) Base-Emitter On Voltage IC= 2A ; VCE= 10V 3.0 V ICEV Collector Cutoff Current VCE=375V; VBE= -1.5V VCE=300V; VBE= -1.5V;TC= 150℃ 2 3 mA ICEO Collector Cutoff Current VCE= 200V; IB= 0 2 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 5 mA hFE-1 DC Current Gain IC= 0.4A; VCE= 10V 20 80 hFE-2 DC Current Gain IC= 2A; VCE= 10V 20 80 hFE-3 DC Current Gain IC= 4.5A; VCE= 10V 5 Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 2 Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT COB isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX UNIT MHz 250 pF