isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW41B DESCRIPTION ·High Voltage ·High Switching Speed ·Low Collector Saturation Voltage APPLICATIONS ·Off-line power supplies ·High voltage inverters ·Switching regulators ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 650 V VCEX Collector-Emitter Voltage VBE= -1.5V 450 V VCER Collector-Emitter Voltage RBE=100Ω 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 1.25 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW41B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 4A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.6 V ICEV Collector Cutoff Current VCE= 650V; VBE= -1.5V 0.1 mA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 2.0 mA hFE DC Current Gain IC= 5A; VCE= 3V 10 40 COB Output Capacitance IE= 0; VCB= 10V;ftest= 0.1MHz 50 300 pF Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 15 60 MHz 0.1 μs 0.5 μs fT CONDITIONS MIN TYP. MAX 400 B B B UNIT V Switching Times; Resistive Load td Delay Time tr Rise Time ts Storage Time 2.5 μs tf Fall Time 0.4 μs IC= 5A; IB1= -IB2= 1A; VCC= 125V;tp= 20μs isc Website：www.iscsemi.cn