Inchange Semiconductor Product Specification 2SA1117 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -200 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -17 A IB Base current -5 A PC Collector power dissipation 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1117 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-8A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 20 20 MHz Inchange Semiconductor Product Specification 2SA1117 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3