Inchange Semiconductor Product Specification 2SC2563 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·High power dissipation APPLICATIONS ·For audio power amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V 8 A 80 W IC Collector current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2563 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,IB=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 5 V VCE(sat) Collector-emitter saturation voltage IC=4A; IB=0.4A 2.0 V ICBO Collector cut-off current VCB=120V; IE=0 50 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=4A ; VCE=5V 35 Transition frequency IC=1A ; VCE=5V fT CONDITIONS 2 MIN TYP. MAX UNIT 160 90 MHz Inchange Semiconductor Product Specification 2SC2563 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3