ISC 2SC2563

Inchange Semiconductor
Product Specification
2SC2563
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(I) package
·High power dissipation
APPLICATIONS
·For audio power amplifier and general
purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
5
V
8
A
80
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2563
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ,IB=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ,IC=0
5
V
VCE(sat)
Collector-emitter saturation voltage
IC=4A; IB=0.4A
2.0
V
ICBO
Collector cut-off current
VCB=120V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
hFE-2
DC current gain
IC=4A ; VCE=5V
35
Transition frequency
IC=1A ; VCE=5V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
160
90
MHz
Inchange Semiconductor
Product Specification
2SC2563
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3