Inchange Semiconductor Product Specification 2SC1586 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High power dissipation ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 15 A IB Base current 4 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1586 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=4V Transition frequency IC=1A ; VCE=12V Collector output capacitance IE=0 ; VCB= 10V; f=1MHz VCEsat fT COB CONDITIONS 2 MIN TYP. MAX UNIT 60 10 110 MHz pF Inchange Semiconductor Product Specification 2SC1586 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3