ISC 2SA758

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA758
DESCRIPTION
·High Power Dissipation: PC= 80W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min.)
·Complement to Type 2SC898
APPLICATIONS
·Designed for use in audio amplifier power output stage and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
-12
A
PC
Collector Power Dissipation
@TC=25℃
80
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA758
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA; RBE= ∞
-110
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
-130
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
-5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5A; IB= -1A
-1.8
V
VBE(on)
Base-Emitter On Voltage
IC= -1A; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -30V; IE= 0
-1.0
mA
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
25
hFE-2
DC Current Gain
IC= -5A; VCE= -5V
20
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
fT
‹
hFE-1 Classifications
A
B
C
25-60
50-120
100-200
isc Website:www.iscsemi.cn
CONDITIONS
MIN
TYP.
MAX
UNIT
200
20
MHz