isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA877 DESCRIPTION ·High Power Dissipation: PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous -4 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA877 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -0.1 mA hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 255 pF Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V 15 MHz fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX -80 UNIT V 30