isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD582 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 7A ·Complement to Type 2SB612 APPLICATIONS ·Designed for 80~100W audio amplifier power output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER ww MAX UNIT 180 V 140 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg w Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD582 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A 1.5 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 160V; IE= 0 10 μA hFE-1 DC Current Gain hFE-2 DC Current Gain m e s isc A B . w w 35-70 60-120 C 100-200 isc Website：www.iscsemi.cn MIN IC= 7A; VCE= 5V TYP. MAX UNIT 140 V 6 V B IC= 1A; VCE= 5V w hFE-1 Classifications CONDITIONS n c . i 35 20 200