Inchange Semiconductor Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1415 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 导体 半 电 固 SYMBOL VCBO VCEO VEBO M E S GE PARAMETER N A H INC Collector-base voltage Collector -emitter voltage Emitter-base voltage R O T UC D N O IC Absolute maximum ratings(Ta=25℃) CONDITIONS VALUE UNIT Open emitter -100 V Open base -100 V -5 V -7 A -0.2 A 30 W Open collector IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1020 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-3A ;IB=-6mA -0.95 -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-7A ;IB=-14mA -1.3 -2.0 V Base-emitter saturation voltage IC=-3A ;IB=-6mA -1.55 -2.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -4.0 mA hFE-1 DC current gain IC=-3A ; VCE=-3V 2000 hFE-2 DC current gain IC=-7A ; VCE=-3V 1000 VBEsat 导体 半 电 -100 UNIT tstg tf 固 Turn-on time Storage time IC M E ES G N A CH Fall time IN OND IB1=-IB2=-6mA VCC=-45V ,RL=15Ω 2 15000 R O T UC Switching times ton V 0.8 μs 2.0 μs 2.5 μs Inchange Semiconductor Product Specification 2SB1020 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3