ISC 2SB1020

Inchange Semiconductor
Product Specification
2SB1020
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220Fa package
・High DC current gain
・Low saturation voltage
・Complement to type 2SD1415
APPLICATIONS
・High power switching applications
・Hammer drive,pulse motor drive applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
导体
半
电
固
SYMBOL
VCBO
VCEO
VEBO
M
E
S
GE
PARAMETER
N
A
H
INC
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
R
O
T
UC
D
N
O
IC
Absolute maximum ratings(Ta=25℃)
CONDITIONS
VALUE
UNIT
Open emitter
-100
V
Open base
-100
V
-5
V
-7
A
-0.2
A
30
W
Open collector
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB1020
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-3A ;IB=-6mA
-0.95
-1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-7A ;IB=-14mA
-1.3
-2.0
V
Base-emitter saturation voltage
IC=-3A ;IB=-6mA
-1.55
-2.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-4.0
mA
hFE-1
DC current gain
IC=-3A ; VCE=-3V
2000
hFE-2
DC current gain
IC=-7A ; VCE=-3V
1000
VBEsat
导体
半
电
-100
UNIT
tstg
tf
固
Turn-on time
Storage time
IC
M
E
ES
G
N
A
CH
Fall time
IN
OND
IB1=-IB2=-6mA
VCC=-45V ,RL=15Ω
2
15000
R
O
T
UC
Switching times
ton
V
0.8
μs
2.0
μs
2.5
μs
Inchange Semiconductor
Product Specification
2SB1020
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3