Inchange Semiconductor Product Specification 2SD2257 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain ・Low saturation voltage ・Complement to type 2SB1495 ・DARLINGTON APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 8 V IC Collector current ±3 A ICM Collector current-peak ±5 A IB Base current 0.3 A PC Collector dissipation Ta=25℃ 2.0 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2257 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=1.5mA 1.5 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=1.5mA 2.0 V ICBO Collector cut-off current VCB=100V ;IE=0 10 μA IEBO Emitter cut-off current VEB=8V; IC=0 4.0 mA hFE-1 DC current gain IC=1A ; VCE=2V 2000 hFE-2 DC current gain IC=2A ; VCE=2V 2000 VECF Diode forward voltage IE=1A 2.0 V 100 UNIT V 0.8 Switching times ton Turn-on time ts Storage time tf Fall time IB1=-IB2=1.5mA VCC=30V ,RL=20Ω Duty cycle≤1% 2 0.5 μs 2.0 μs 0.5 μs Inchange Semiconductor Product Specification 2SD2257 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3