ISC 2SD2257

Inchange Semiconductor
Product Specification
2SD2257
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・High DC current gain
・Low saturation voltage
・Complement to type 2SB1495
・DARLINGTON
APPLICATIONS
・High power switching applications
・Hammer drive,pulse motor drive applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current
±3
A
ICM
Collector current-peak
±5
A
IB
Base current
0.3
A
PC
Collector dissipation
Ta=25℃
2.0
TC=25℃
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD2257
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=1.5A ;IB=1.5mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=1.5A ;IB=1.5mA
2.0
V
ICBO
Collector cut-off current
VCB=100V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=8V; IC=0
4.0
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
2000
hFE-2
DC current gain
IC=2A ; VCE=2V
2000
VECF
Diode forward voltage
IE=1A
2.0
V
100
UNIT
V
0.8
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=1.5mA
VCC=30V ,RL=20Ω
Duty cycle≤1%
2
0.5
μs
2.0
μs
0.5
μs
Inchange Semiconductor
Product Specification
2SD2257
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3