Inchange Semiconductor Product Specification 2SC1051 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Wide area of safe operation APPLICATIONS ・For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS IC M E ES G N A CH IN OND Open emitter Open base Open collector R O T UC VALUE UNIT 150 V 100 V 5 V 7 A 60 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1051 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=0.5A ; VCE=5V VCEsat fT CONDITIONS 导体 半 电 固 C 40-80 IN D 60-120 E F 100-200 160-320 2 TYP. MAX R O T UC 40 OND IC M E ES G N A CH hFE Classifications MIN UNIT 320 8 MHz Inchange Semiconductor Product Specification 2SC1051 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3