Inchange Semiconductor Product Specification 2SA837 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1667 APPLICATIONS ·For radio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -90 V VCEO Collector-emitter voltage Open base -90 V VEBO Emitter-base voltage Open collector -5 V -4 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=75℃ Inchange Semiconductor Product Specification 2SA837 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 -90 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -90 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V ICBO Collector cut-off current VCB=-90V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-4V COB Collector output capacitance IE=0; VCB=-10V;f=1MHz 200 pF Transition frequency IC=-1A ; VCE=-10V 10 MHz VCEsat fT CONDITIONS 2 MIN TYP. 40 MAX UNIT 200 Inchange Semiconductor Product Specification 2SA837 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3