ISC 2SA650

Inchange Semiconductor
Product Specification
2SA650
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
APPLICATIONS
·For audio frequency and power amplifier
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-6
V
-10
A
100
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA650
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
-150
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.5
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
mA
hFE
DC current gain
IC=-2A ; VCE=-5V
COB
Collector output capacitance
IE=0; VCB=-10V;f=1MHz
500
pF
Transition frequency
IC=-1A ; VCE=-5V
10
MHz
fT
CONDITIONS
2
MIN
TYP.
30
MAX
UNIT
150
Inchange Semiconductor
Product Specification
2SA650
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3