Inchange Semiconductor Product Specification 2SC1030 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V 6 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1030 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V Collector-emitter saturation voltage IC=5A; IB=1A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 35 hFE-2 DC current gain IC=5A ; VCE=5V 22 Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS hFE-1 classifications A B C 35-70 60-120 100-200 2 MIN TYP. MAX UNIT 200 10 MHz Inchange Semiconductor Product Specification 2SC1030 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3