Inchange Semiconductor Product Specification 2SC4595 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V 12 A 30 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4595 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=50μA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=6A, IB=0.3A 0.3 V VBEsat Base-emitter saturation voltage IC=6A, IB=0.3A 1.2 V ICBO Collector cut-off current VCB=100V, IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=2A ; VCE=2V Transition frequency IC=0.5A ; VCE=10V fT PARAMETER hFE Classifications D E F 60-120 100-200 160-320 2 60 320 120 MHz Inchange Semiconductor Product Specification 2SC4595 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3