ISC 2SC5382

Inchange Semiconductor
Product Specification
2SC5382
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・High Voltage
・High speed switching
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1200
V
VCEO
Collector-emitter voltage
Open base
550
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current
6
A
ICM
Collector current-peak
12
A
IB
Base current
3
A
IBM
Base current-peak
6
A
PT
Total power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
3.13
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
Inchange Semiconductor
Product Specification
2SC5382
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.6 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6 A
1.5
V
ICBO
Collector cut-off current
VCB=1200V; IE=0
0.1
mA
ICEO
Collector cut-off current
VCE=550V; IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
0.1
mA
hFE-1
DC current gain
IC=3A ; VCE=5V
10
hFE-2
DC current gain
IC=1mA ; VCE=5V
10
1.3
μs
4.0
μs
0.3
μs
550
UNIT
V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A;IB1=0.6A ;IB2=1.2A
RL=50Ω;VBB2=4V
2
Inchange Semiconductor
Product Specification
2SC5382
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3