Inchange Semiconductor Product Specification BU208 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・For use in horizontal deflection output stages for color TV receives. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V 5 A IC Collector current ICM Collector current-peak 7.5 A IB Base current 0.1 A IBM Base current-peak 2.5 A PT Total power dissipation 150 W Tj Junction temperature 115 ℃ Tstg Storage temperature -65~115 ℃ MAX UNIT 1. 6 K/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BU208 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) V(BR)EBO TYP. MAX UNIT Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH 700 V Emitter-base breakdown votage IE=10mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5 A;IB=2 A 1.5 V ICES Collector cut-off current VCE=1500V;VBE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 DC current gain IC=4.5A ; VCE=5V COB Output capacitance IE=0; VCB=10V;f=1MHz fT Transition frequency IC=0.1A ; VCE=15V ts Storage time 8 2.25 150 pF 1 MHz 10 μs 0.7 μs IC=4.5A ;IB=1.8A LB=10μH tf Fall time 2 Inchange Semiconductor Product Specification BU208 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3