ISC BU208

Inchange Semiconductor
Product Specification
BU208
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3 package
・High voltage ,high speed
APPLICATIONS
・For use in horizontal deflection output
stages for color TV receives.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
5
V
5
A
IC
Collector current
ICM
Collector current-peak
7.5
A
IB
Base current
0.1
A
IBM
Base current-peak
2.5
A
PT
Total power dissipation
150
W
Tj
Junction temperature
115
℃
Tstg
Storage temperature
-65~115
℃
MAX
UNIT
1. 6
K/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BU208
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
V(BR)EBO
TYP.
MAX
UNIT
Collector-emitter sustaining voltage
IC=0.1A; IB=0;L=25mH
700
V
Emitter-base breakdown votage
IE=10mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=4.5 A;IB=2 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5 A;IB=2 A
1.5
V
ICES
Collector cut-off current
VCE=1500V;VBE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=5V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.1A ; VCE=15V
ts
Storage time
8
2.25
150
pF
1
MHz
10
μs
0.7
μs
IC=4.5A ;IB=1.8A
LB=10μH
tf
Fall time
2
Inchange Semiconductor
Product Specification
BU208
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3