Inchange Semiconductor Product Specification 2SC1445 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A IB Base current 1 A PD Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1445 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.2A 0.7 V VCEsat-2 Collector-emitter saturation voltage IC=6A ;IB=0.6A 1.2 V VBE sat-1 Base-emitter saturation voltage IC=2A; IB=0.2A 1.2 V VBE sat-2 Base-emitter saturation voltage IC=6A ;IB=0.6A 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=4V Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX 80 UNIT V 30 10 MHz Inchange Semiconductor Product Specification 2SC1445 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3