Inchange Semiconductor Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6372 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6373 Open emitter 70 2N6374 50 2N6372 80 2N6373 Emitter-base voltage UNIT 90 Open base 2N6374 VEBO VALUE 60 V V 40 Open collector 6 V 6 A 40 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 4.37 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6372 VCEO(SUS) Collector-emitter sustaining voltage 2N6373 MIN TYP. MAX UNIT 80 IC=0.1A ;IB=0 V 60 40 2N6374 VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.2A 0.7 V VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A 1.2 V VBEsat-1 Base-emitter saturation voltage IC=2A; IB=0.2A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=6A; IB=0.6A 2.0 V 0.1 mA ICEO Collector cut-off current 2N6372 VCE=80V; IB=0 2N6373 VCE=60V; IB=0 2N6374 VCE=40V; IB=0 ICBO Collector cut-off current VCB=Rated VCB; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE fT DC current gain Transition frequency 2N6372 IC=2A ; VCE=2V 2N6373 IC=2.5A ; VCE=2V 2N6374 IC=3A ; VCE=2V IC=0.5A;VCE=10V;f=1MHz 2 20 100 4 MHz Inchange Semiconductor Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3