ISC 2SC1828

Inchange Semiconductor
Product Specification
2SC1828
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Continuous collector current-IC=1A
·Power dissipation –PC=40W @TC=25℃
APPLICATIONS
·For power amplifier applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
800
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
6
V
1
A
40
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1828
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=0.2A ; VCE=10V
Transition frequency
IC=0.1A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
30
MAX
UNIT
200
10
MHz
Inchange Semiconductor
Product Specification
2SC1828
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3