Inchange Semiconductor Product Specification 2SC1828 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=1A ·Power dissipation –PC=40W @TC=25℃ APPLICATIONS ·For power amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 6 V 1 A 40 W IC Collector current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1828 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.2A ; VCE=10V Transition frequency IC=0.1A ; VCE=10V fT CONDITIONS 2 MIN TYP. 30 MAX UNIT 200 10 MHz Inchange Semiconductor Product Specification 2SC1828 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3