ISC 2SA1250

Inchange Semiconductor
Product Specification
2SA1250
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·High breadown voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-200
V
VCEO
Collector-emitter voltage
Open base
-200
V
VEBO
Emitter-base voltage
Open collector
-7
V
-8
A
30
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA1250
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
-200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-7
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
ICBO
Collector cut-off current
VCB=200V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-10
μA
hFE-1
DC current gain
IC=-2A ; VCE=-1V
40
hFE-2
DC current gain
IC=-5A ; VCE=-1V
20
2
MIN
TYP.
MAX
200
UNIT
Inchange Semiconductor
Product Specification
2SA1250
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3