Inchange Semiconductor Product Specification 2SC2527 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SA1077 ・Fast switching speed ・Excellent safe operating area APPLICATIONS ・High frequency power amplifiers ・Audio power amplifiers ・Switching regulators ・DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 固电 EM S E NG Absolute maximum ratings(Ta=25℃) SYMBOL VCBO A H C IN PARAMETER R O T UC D N O IC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V 10 A 60 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2527 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; RBE=∞ 120 V V(BR)CBO Collector-base breakdown voltage IC=50μA ; IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=50μA ; IC=0 7 V Collector-emitter saturation voltage IC=5A; IB=0.5A 1.8 V VBE Base-emitter on voltage IC=5 A ; VCE=5V 1.7 V ICBO Collector cut-off current VCB=120V ;IE=0 50 μA ICEO Collector cut-off current VCE=120V; IB=0 1 mA IEBO Emitter cut-off current VEB=7V ;IC=0 hFE-1 DC current gain VCEsat hFE -2 fT COB 体 导 半 固电 A H C IN Output capacitance MIN IC=5 A ; VCE=5V TYP. MAX R O T UC D N O IC IC=1 A ; VCE=5V EM S E NG DC current gain Transition frequency CONDITIONS 50 60 UNIT μA 200 40 IC=1 A ; VCE=10V 80 MHz IE=0 ; VCB=10V; f=1MHz 180 pF 0.3 μs 1.3 μs 0.2 μs Switching times tr Rise time ts Storage time tf Fall time IC=7.5 A; RL=4Ω IB1=-IB2=0.75A 2 Inchange Semiconductor Product Specification 2SC2527 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3