ISC 2SC2527

Inchange Semiconductor
Product Specification
2SC2527
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SA1077
・Fast switching speed
・Excellent safe operating area
APPLICATIONS
・High frequency power amplifiers
・Audio power amplifiers
・Switching regulators
・DC-DC converters
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
体
导
半
固电
EM
S
E
NG
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
A
H
C
IN
PARAMETER
R
O
T
UC
D
N
O
IC
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
7
V
10
A
60
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2527
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ; RBE=∞
120
V
V(BR)CBO
Collector-base breakdown voltage
IC=50μA ; IE=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50μA ; IC=0
7
V
Collector-emitter saturation voltage
IC=5A; IB=0.5A
1.8
V
VBE
Base-emitter on voltage
IC=5 A ; VCE=5V
1.7
V
ICBO
Collector cut-off current
VCB=120V ;IE=0
50
μA
ICEO
Collector cut-off current
VCE=120V; IB=0
1
mA
IEBO
Emitter cut-off current
VEB=7V ;IC=0
hFE-1
DC current gain
VCEsat
hFE -2
fT
COB
体
导
半
固电
A
H
C
IN
Output capacitance
MIN
IC=5 A ; VCE=5V
TYP.
MAX
R
O
T
UC
D
N
O
IC
IC=1 A ; VCE=5V
EM
S
E
NG
DC current gain
Transition frequency
CONDITIONS
50
60
UNIT
μA
200
40
IC=1 A ; VCE=10V
80
MHz
IE=0 ; VCB=10V; f=1MHz
180
pF
0.3
μs
1.3
μs
0.2
μs
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
IC=7.5 A; RL=4Ω
IB1=-IB2=0.75A
2
Inchange Semiconductor
Product Specification
2SC2527
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3