Inchange Semiconductor Product Specification 2SC4108 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide ASO(Safe Operating Area) APPLICATIONS ·400V/12A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 12 A ICP Collector current-pulse 25 A IB Base current 4 A PC Collector power dissipation Ta=℃ 2.5 TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4108 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A 0.8 V VBEsat Base-emitter saturation voltage IC=8A; IB=1.6A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1.6A ; VCE=5V 15 hFE-2 DC current gain IC=8A ; VCE=5V 10 hFE-3 DC current gain IC=10mA ; VCE=5V 10 Transition frequency IC=1.6A ; VCE=10V 20 MHz Collector output capacitance f=1MHz ; VCB=10V 160 pF fT COB CONDITIONS MIN TYP. MAX UNIT 50 Switching times ton Turn-on time tstg Storage time tf IC=10A;IB1=2A; IB2=-4A;RL=20Ω VCC=200V Fall time hFE-1 classifications L M N 15-30 20-40 30-50 2 0.5 μs 2.5 μs 0.3 μs Inchange Semiconductor Product Specification 2SC4108 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SC4108 Silicon NPN Power Transistors 4